General Purpose NPN Transistor FUXINSEMI S9015 SOT23 Package High Collector Current Electronic Device
Key Attributes
Model Number:
S9015
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9015
Package:
SOT-23
Product Description
Product Overview
The S9015 is a high-performance NPN transistor designed for general-purpose applications. It features high collector current capability, excellent hFE linearity, and serves as a complementary part to the S9014. Its robust design and reliable performance make it suitable for various electronic circuits.
Product Attributes
- Brand: Fuxin Semiconductor
- Package Type: SOT-23
- Complementary to: S9014
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC= -100A, IE=0 | -50 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -0.1mA, IB=0 | -45 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-100A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-50 V, IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= -5V, IC=0 | -0.1 | A | ||
| hFE | DC current gain | VCE=-5V, IC= -1mA | 200 | 1000 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-100mA, IB= -10mA | -0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=-100mA, IB=-10mA | -1 | V | ||
| fT | Transition frequency | VCE=-5V, IC= -10mA, f=30MHz | 150 | MHz | ||
| PC | Collector Power Dissipation | (Ta=25) | 200 | mW | ||
| RJA | Thermal Resistance From Junction To Ambient | (Ta=25) | 625 | /W | ||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 |
2010271837_FUXINSEMI-S9015_C908256.pdf
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