High collector current complementary PNP transistor FUXINSEMI SS8550-TA designed for general purpose

Key Attributes
Model Number: SS8550-TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550-TA
Package:
TO-92
Product Description

Product Overview

The SS8550-TA is a complementary PNP bipolar transistor designed for general-purpose applications. It features high collector current capability and is complementary to the SS8050 NPN transistor.

Product Attributes

  • Brand: FUXIN
  • Origin: (Not specified)
  • Material: (Not specified)
  • Color: (Not specified)
  • Certifications: (Not specified)

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
V(BR)CBOCollector-base breakdown voltageIC=-100A, IE=0-40V
V(BR)CEOIC=-0.1mA, IB=0-25V
V(BR)EBOIE=-100A, IC=0-5V
ICBOCollector cut-off currentVCB=-40V, IE=0-100nA
ICEOVCE=-20V, IB=0-100nA
IEBOEmitter cut-off currentVEB=-5V, IC=0-100nA
hFEDC current gainVCE=-1V, IC=-100mA100400
VCE=-1V, IC=-800mA35
VCE(sat)Collector-emitter saturation voltageIC=-800mA, IB=-80mA-0.5V
VBE(sat)Base-emitter saturation voltageIC=-800mA, IB=-80mA-1.3V
VBEBase-emitter voltageVCE=-1V, IC=-10mA-1V
fTTransition frequencyVCE=-10V,IC=-50mA , f=30MHz150MHz
CobCollector output capacitanceVCB=-10V, IE=0, f=1MHz20pF
MAXIMUM RATINGS
VCBOCollector-Base Voltage-40V
VCEOCollector-Emitter Voltage-25V
VEBOEmitter-Base Voltage-5V
ICCollector Current-1.5A
PDPower Dissipation625mW
RJAThermal Resistance From Junction To Ambient417/W
TjJunction Temperature150
TstgStorage Temperature-55+150

2504101957_FUXINSEMI-SS8550-TA_C42371343.pdf

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