High Shock Load Withstand TRIAC FUXINSEMI BTB16-800BW 16A RMS Current for Inductive Load Control
Key Attributes
Model Number:
BTB16-800BW
Product Custom Attributes
Holding Current (Ih):
-
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB16-800BW
Package:
TO-220B
Product Description
Product Overview
The BTB16 Series are 16A, 3-quadrant TRIACs in a TO-220B package, designed with high ability to withstand shock loading of large currents and excellent commutation performance. These devices are especially recommended for use with inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor (FS)
- Package: TO-220B
Technical Specifications
| Symbol | Parameter | BTB16-600BW | BTB16-800BW | Unit | Test Condition |
| VDRM | Repetitive peak off-state voltage | 600 | 800 | V | |
| VRRM | Repetitive peak reverse voltage | 600 | 800 | V | |
| IT(RMS) | RMS on-state current | 16 | 16 | A | |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 160 | 160 | A | |
| I2t | I2t value for fusing (tp=10ms) | 140 | 140 | A2s | |
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 100 | 100 | A/s | -- |
| IGM | Peak gate current | 4 | 4 | A | |
| PG(AV) | Average gate power dissipation | 1 | 1 | W | |
| TJ | Junction Temperature | -40 ~ +125 | -40 ~ +125 | ||
| TSTG | Storage Temperature | -40 ~ +150 | -40 ~ +150 | ||
| IGT | Gate trigger current | 35 (BW) / 50 (B) | 35 (BW) / 50 (B) | mA | VD =12V RL = 33 Tj =25 -- |
| VGT | Gate trigger voltage | 1.3 | 1.3 | V | -- |
| VGD | Gate non-trigger voltage | 0.2 | 0.2 | V | VD =VDRM Tj =125 |
| IL | latching current | 50 (B) / 70 (BW) | 50 (B) / 70 (BW) | mA | IG =1.2IGT - |
| IL | latching current | 60 (B) / 80 (BW) | 60 (B) / 80 (BW) | mA | IG =1.2IGT |
| IH | Holding current | 30 (B) / 50 (BW) | 30 (B) / 50 (BW) | mA | IT =500mA |
| dVD/dt | Critical-rate of rise of commutation voltage | 500 (BW) / 1000 (B) | 500 (BW) / 1000 (B) | V/s | VD=2/3VDRM Gate Open Tj =125 |
| VTM | Forward "on" voltage | 1.55 | 1.55 | V | ITM =23A tp=380s |
| IDRM | Repetitive Peak Off-State Current | 5 | 5 | A | VD =VDRM Tj=25 |
| IRRM | Repetitive Peak Reverse Current | 1 | 1 | mA | VR =VRRM Tj=125 |
| Rth(j-c) | Junction to case(AC) | 1.2 | 1.2 | /W | |
| Rth(j-a) | Junction to ambient | 60 | 60 | /W |
2409272300_FUXINSEMI-BTB16-800BW_C5380691.pdf
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