Low Gate Charge N Channel MOSFET GL GL6009AS 8 Suitable for Hard Switched and High Frequency Circuits
Key Attributes
Model Number:
GL6009AS-8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
270pF
Pd - Power Dissipation:
2.6W
Input Capacitance(Ciss):
2.2nF
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
GL6009AS-8
Package:
SOIC-8
Product Description
Product Overview
The GL6009AS-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% single pulse avalanche energy tested. This RoHS-compliant MOSFET is available in a SOP-8 package and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N-Channel
- Package Type: SOP-8
- Compliance: RoHS standard
Technical Specifications
| Parameter | Rating | Units |
|---|---|---|
| General Ratings | ||
| Drain-to-Source Voltage (VDSS) | 60 | V |
| Continuous Drain Current (ID) @ Tc=25 | 9 | A |
| Continuous Drain Current (ID) @ Tc=100 | 6.5 | A |
| Pulsed Drain Current (IDM) | 36 | A |
| Gate-to-Source Voltage (VGS) | 20 | V |
| Single Pulse Avalanche Energy (EAS) a2 | 50 | mJ |
| Avalanche Energy, Repetitive (EAR) a1 | 11 | mJ |
| Avalanche Current (IAR) a1 | 5 | A |
| Peak Diode Recovery dv/dt (a3) | 5.0 | V/ns |
| Power Dissipation (PD) | 2.6 | W |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 175 | |
| Maximum Temperature for Soldering (TL) | 300 | |
| Electrical Characteristics | ||
| Drain to Source Breakdown Voltage (VDSS) @ VGS=0V, ID=250A | 60 | V |
| Bvdss Temperature Coefficient @ ID=250uA, Reference 25 | 0.1 | V/ |
| Drain to Source Leakage Current (IDSS) @ VDS=60V, VGS=0V, Ta=25 | 1 (Max) | A |
| Drain to Source Leakage Current (IDSS) @ VDS=48V, VGS=0V, Ta=125 | 250 (Max) | A |
| Gate to Source Forward Leakage (IGSS(F)) @ VGS=+20V | 1 (Max) | A |
| Gate to Source Reverse Leakage (IGSS(R)) @ VGS=-20V | -1 (Max) | A |
| Drain-to-Source On-Resistance (RDS(ON)) @ VGS=10V, ID=9A | 11 (Typ), 14 (Max) | m |
| Gate Threshold Voltage (VGS(TH)) @ VDS=VGS, ID=250A | 1.0 (Min), 1.7 (Typ), 2.5 (Max) | V |
| Forward Transconductance (gfs) @ VDS=5V, ID=9A | 25 (Min) | S |
| Input Capacitance (Ciss) @ VGS=0V, VDS=30V, f=1.0MHz | 2200 (Typ) | pF |
| Output Capacitance (Coss) @ VGS=0V, VDS=30V, f=1.0MHz | 270 (Typ) | pF |
| Reverse Transfer Capacitance (Crss) @ VGS=0V, VDS=30V, f=1.0MHz | 240 (Typ) | pF |
| Turn-on Delay Time (td(ON)) @ ID=9A, VDD=30V, VGS=10V, RG=3.0 | 8.8 (Typ) | ns |
| Rise Time (tr) @ ID=9A, VDD=30V, VGS=10V, RG=3.0 | 7.1 (Typ) | ns |
| Turn-Off Delay Time (td(OFF)) @ ID=9A, VDD=30V, VGS=10V, RG=3.0 | 33 (Typ) | ns |
| Fall Time (tf) @ ID=9A, VDD=30V, VGS=10V, RG=3.0 | 6.0 (Typ) | ns |
| Total Gate Charge (Qg) @ ID=9A, VDD=30V, VGS=10V | 61 (Typ) | nC |
| Gate to Source Charge (Qgs) @ ID=9A, VDD=30V, VGS=10V | 8.5 (Typ) | nC |
| Gate to Drain (Miller) Charge (Qgd) @ ID=9A, VDD=30V, VGS=10V | 17.6 (Typ) | nC |
| Continuous Source Current (Body Diode) (IS) | 9 | A |
| Maximum Pulsed Current (Body Diode) (ISM) | 36 | A |
| Diode Forward Voltage (VSD) @ IS=9A, VGS=0V | 1.5 (Max) | V |
| Reverse Recovery Time (trr) @ IS=9A, Tj = 25C, dIF/dt=100A/us, VGS=0V | 30 (Typ) | ns |
| Reverse Recovery Charge (Qrr) @ IS=9A, Tj = 25C, dIF/dt=100A/us, VGS=0V | 45 (Typ) | nC |
| Junction-to-Ambient Thermal Resistance (RJA) | 48 | /W |
2409290933_GL-GL6009AS-8_C2985896.pdf
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