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quality High Density Cell P Channel MOSFET GL GL3401K with RoHS Compliance and Advanced Trench Technology factory
quality High Density Cell P Channel MOSFET GL GL3401K with RoHS Compliance and Advanced Trench Technology factory

High Density Cell P Channel MOSFET GL GL3401K with RoHS Compliance and Advanced Trench Technology

Key Attributes
Model Number: GL3401K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
-
Mfr. Part #:
GL3401K
Package:
SOT-23
Product Description

Product Overview

The GL3401K is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it features a high-density cell design for ultra-low Rdson and is housed in a RoHS-compliant SOT-23 package. This MOSFET is characterized by its fully guaranteed avalanche voltage and current, and an excellent package for efficient heat dissipation, making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei electronic technology co., LTD
  • Package Type: SOT-23
  • RoHS Standard: Compliant
  • Technology: Advanced Trench
  • Channel Type: P-Channel

Technical Specifications

Symbol Parameter Test Conditions Rating Units Min. Typ. Max.
Absolute Ratings (Tc= 25 unless otherwise specified)
VDSS Drain-to-Source Voltage -30 V
ID Continuous Drain Current -4.1 A
VGS Gate-to-Source Voltage 12 V
PD Power Dissipation 1.2 W
TJ, Tstg Operating Junction and Storage Temperature Range 150, 55 to 150
Thermal Characteristics (Tc= 25 unless otherwise specified)
RJA Junction-to-Ambient 104.1 /W
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=-250A -30 V -30
IDSS Drain to Source Leakage Current VDS=-24V, VGS= 0V,Ta=25 A -1.0
IGSS(F) Gate to Source Forward Leakage VGS=+12V A 0.1
IGSS(R) Gate to Source Reverse Leakage VGS=-12V A -0.1
ON Characteristics
RDS(ON)1 Drain-to-Source On-Resistance VGS=-10V,ID=-4.2A m 55
RDS(ON)2 Drain-to-Source On-Resistance VGS=-4.5V,ID=-3.5A m 65
RDS(ON)3 Drain-to-Source On-Resistance VGS=-2.5V,ID=-1A m 75
VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250A V -0.5 -1.3
Dynamic Characteristics (Pulse width tp380s,2%)
gfs Forward Transconductance VDS=-5V,ID=-5A 7 S 7
Ciss Input Capacitance VGS=0V,VDS=-15V f=1.0MHz pF 954
Coss Output Capacitance pF 115
Crss Reverse Transfer Capacitance pF 77
Resistive Switching Characteristics (a2)
td(ON) Turn-on Delay Time VDD=-15V,RL=-3.6 VGS=-10V,RG=6 ns 6.3
tr Rise Time ns 3.2
td(OFF) Turn-Off Delay Time ns 38.2
tf Fall Time ns 12
Source-Drain Diode Characteristics
VSD Diode Forward Voltage IS=-1A,VGS=0V V -1

2410121342_GL-GL3401K_C2880537.pdf

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