Power Conditioning and UPS Discrete IGBT Fuji Electric FGW50N60HD High Speed V Series TO247 Package
Key Attributes
Model Number:
FGW50N60HD
Product Custom Attributes
Td(off):
310ns
Pd - Power Dissipation:
360W
Td(on):
35ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
160pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@50mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
210pF
Reverse Recovery Time(trr):
25ns
Switching Energy(Eoff):
1.7mJ
Turn-On Energy (Eon):
1.4mJ
Mfr. Part #:
FGW50N60HD
Package:
TO-247
Product Description
Product Overview
The Fuji Electric FGW50N60HD is a high-speed Discrete IGBT from the V series, designed for applications requiring low power loss, reduced switching surge and noise, and high reliability. It offers robust performance with features like RBSOA and SCSOA, making it suitable for power conditioning and uninterruptible power supply systems.
Product Attributes
- Brand: Fuji Electric
- Product Series: High-Speed V series
- Package: TO-247
Technical Specifications
| Item | Symbol | Conditions | Units | min. | typ. | max. | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | V | 600 | ||||
| Gate-Emitter Voltage | VGES | V | 20 | ||||
| Collector Current | IC@25 | TC=25C,Tj=150C | A | 95 | |||
| Collector Current | IC@100 | TC=100C,Tj=150C | A | 50 | |||
| Pulsed Collector Current | ICP | Note *1 | A | 150 | |||
| Turn-Off Safe Operating Area | 150 A VCE600V,Tj175C | ||||||
| Diode Forward Current | IF@25 | A | 43 | ||||
| Diode Forward Current | IF@100 | A | 25 | ||||
| Diode Pulsed Current | IFP | Note *1 | A | 150 | |||
| Short Circuit Withstand Time | tSC | VCC300V,VGE=12V Tj150C | s | 5 | |||
| IGBT Max. Power Dissipation | PD_IGBT | TC=25C | W | 360 | |||
| FWD Max. Power Dissipation | PD_FWD | TC=25C | 125 | ||||
| Operating Junction Temperature | Tj | C | -40 | +175 | |||
| Storage Temperature | Tstg | C | -55 | +175 | |||
| Electrical Characteristics | |||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | IC = 250A, VGE = 0V | V | 600 | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 600V, VGE = 0V | A | 250 | Tj=25C | ||
| Zero Gate Voltage Collector Current | ICES | VCE = 600V, VGE = 0V | mA | 10 | Tj=175C | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = 20V | nA | 200 | |||
| Gate-Emitter Threshold Voltage | VGE (th) | VCE = +20V, IC = 50mA | V | 4.0 | 5.0 | 6.0 | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 50A | V | 1.50 | 1.95 | Tj=25C | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 50A | V | 1.80 | Tj=175C | ||
| Input Capacitance | Cies | VCE=25V VGE=0V f=1MHz | pF | 4320 | |||
| Output Capacitance | Coes | pF | 210 | ||||
| Reverse Transfer Capacitance | Cres | pF | 160 | ||||
| Gate Charge | QG | VCC = 400V IC = 50A VGE = 15V | nC | 305 | |||
| Turn-On Delay Time | td(on) | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 35 | Tj = 25C | ||
| Rise Time | tr | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 75 | Tj = 25C | ||
| Turn-Off Delay Time | td(off) | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 310 | Tj = 25C | ||
| Fall Time | tf | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 60 | Tj = 25C | ||
| Turn-On Energy | Eon | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | mJ | 1.4 | Tj = 25C | ||
| Turn-Off Energy | Eoff | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | mJ | 1.7 | Tj = 25C | ||
| Turn-On Delay Time | td(on) | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 40 | Tj = 175C | ||
| Rise Time | tr | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 85 | Tj = 175C | ||
| Turn-Off Delay Time | td(off) | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 335 | Tj = 175C | ||
| Fall Time | tf | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | ns | 72 | Tj = 175C | ||
| Turn-On Energy | Eon | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | mJ | 2.4 | Tj = 175C | ||
| Turn-Off Energy | Eoff | VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H | mJ | 2.2 | Tj = 175C | ||
| FWD Characteristics | |||||||
| Forward Voltage Drop | VF | IF=25A | V | 2.0 | 2.6 | Tj=25C | |
| Forward Voltage Drop | VF | IF=25A | V | 1.4 | Tj=175C | ||
| Diode Reverse Recovery Time | trr1 | VCC=30V,IF = 2.5A -di/dt=200A/s | ns | 25 | 33 | ||
| Diode Reverse Recovery Time | trr2 | VCC=400V IF=25A -diF/dt=200A/s | s | 0.04 | Tj=25C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V IF=25A -diF/dt=200A/s | C | 0.08 | Tj=25C | ||
| Diode Reverse Recovery Time | trr2 | VCC=400V IF=25A -diF/dt=200A/s | s | 0.16 | Tj=175C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V IF=25A -diF/dt=200A/s | C | 0.75 | Tj=175C | ||
| Thermal Resistance Characteristics | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | C/W | 50 | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | 0.417 | |||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | 1.191 | |||||
2410181500_Fuji-Electric-FGW50N60HD_C35532347.pdf
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