High Current N Channel MOSFET GL GL80N10A4 Suitable for Hard Switched and High Frequency Circuits
Key Attributes
Model Number:
GL80N10A4
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
354pF
Input Capacitance(Ciss):
4.2nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
GL80N10A4
Package:
TO-252
Product Description
Product Overview
The GL80N10A4 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It is housed in a TO-252 package that complies with RoHS standards, offering good heat dissipation.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: TO-252
- Compliance: RoHS standard
Technical Specifications
| Parameter | Test Conditions | Rating | Units |
|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | |||
| Drain-to-Source Voltage (VDSS) | 100 | V | |
| Continuous Drain Current (ID) | 80 | A | |
| Pulsed Drain Current (IDM) | 320 | A | |
| Gate-to-Source Voltage (VGS) | 20 | V | |
| Power Dissipation (PD) | 125 | W | |
| Derating factor | 0.8 | W/ | |
| Single pulse avalanche energy (EAS) | a5 | 320 | mJ |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 175 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | |||
| OFF Characteristics | |||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 100 | V |
| Drain to Source Leakage Current (IDSS) | VDS=100V, VGS= 0V,Ta=25 | -- | 1.0 A |
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | -- | 0.1 A |
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | -- | -0.1 A |
| ON Characteristics | |||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=40A | -- 8.5 | m |
| (Typ) Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=40A | 7.2 | m |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250A | 1.0 2.5 | V |
| (Typ) Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250A | 1.7 | V |
| Dynamic Characteristics | |||
| Forward Transconductance (gfs) | VDS=10V,ID=40A | 40 -- | S |
| Input Capacitance (Ciss) | VGS=0V,VDS=50V f=1.0MHz | -- 4200 -- | pF |
| Output Capacitance (Coss) | -- 354 -- | pF | |
| Reverse Transfer Capacitance (Crss) | -- 23 -- | pF | |
| Resistive Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | VDD=50V,ID=40A VGS=10V,RG=4.7 | -- 15 -- | ns |
| Rise Time (tr) | -- 10 -- | ns | |
| Turn-Off Delay Time (td(OFF)) | -- 41 -- | ns | |
| Fall Time (tf) | -- 6 -- | ns | |
| Total Gate Charge (Qg) | VDD=50V, ID=40A VGS=10V | -- 65 -- | nC |
| Gate to Source Charge (Qgs) | -- 15.3 -- | ||
| Gate to Drain (Miller)Charge (Qgd) | -- 9 -- | ||
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (IS) (Body Diode) | a2 | -- -- 80 | A |
| Diode Forward Voltage (VSD) | IS=80A,VGS=0V a3 | -- -- 1.2 | V |
| Thermal Characteristics | |||
| Junction-to-Case (RJC) | a2 | 1.25 | /W |
Notes:
a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t10sec.
a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
a4: Guaranteed by design, not subject to production.
a5: EAS condition: Tj=25, VDD=50V, VG=10V, L=0.5mH, Rg=25
2410121435_GL-GL80N10A4_C2886416.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
