Power Switching N Channel MOSFET GL GL20N04A4 with Robust TO 252 Package and Low Gate Charge Design
Key Attributes
Model Number:
GL20N04A4
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
20A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
32.5W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
GL20N04A4
Package:
TO-252-2
Product Description
Product Overview
The GL20N04A4 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers an ultra-low Rdson and is fully characterized for avalanche voltage and current. Its robust package ensures good heat dissipation, making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. This product complies with RoHS standards.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Package Type: TO-252
- Compliance: RoHS standard
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 40 | V | |
| ID | Continuous Drain Current | 20 | A | |
| IDM | Pulsed Drain Current | 80 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| PD | Power Dissipation | 32.5 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 40 | V |
| IDSS | Drain to Source Leakage Current | VDS=40V, VGS= 0V,Ta=25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -0.1 A |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=10A | -- | 25 m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.0 | 2.5 V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=15V,ID=2A | -- | 3 S |
| Ciss | Input Capacitance | VGS=0V,VDS=20V f=1.0MHz | -- | 247 pF |
| Coss | Output Capacitance | -- | 34 pF | |
| Crss | Reverse Transfer Capacitance | -- | 19.5 pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | VDD=20V,ID=3A VGS=10V,RG=1 | -- | 6 ns |
| tr | Rise Time | -- | 15 ns | |
| td(OFF) | Turn-Off Delay Time | -- | 15 ns | |
| tf | Fall Time | -- | 10 ns | |
| Qg | Total Gate Charge | VDD=20V, ID=3A VGS=4.5V | -- | 6 nC |
| Qgs | Gate to Source Charge | -- | 1 nC | |
| Qgd | Gate to Drain (Miller )Charge | -- | 1.3 nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -- | 20 A | |
| VSD | Diode Forward Voltage | IS=20A,VGS=0V | -- | 1.5 V |
| Thermal Characteristics | ||||
| RJC | Junction-to-Case | 3.846 | /W | |
2411220157_GL-GL20N04A4_C3038122.pdf
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