252 Package N Channel Power MOSFET GL GL80N06A4 with RoHS Compliance and High Density Cell Design
Key Attributes
Model Number:
GL80N06A4
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
4nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
GL80N06A4
Package:
TO-252
Product Description
Product Overview
The GL80N06A4 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for avalanche voltage and current. Its TO-252 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: TO-252
- Compliance: RoHS Standard
Technical Specifications
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. | |
|---|---|---|---|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | |||||||
| VDSS | Drain-to-Source Voltage | 60 | V | ||||
| ID | Continuous Drain Current | 80 | A | ||||
| IDM | Pulsed Drain Current | 180 | A | ||||
| VGS | Gate-to-Source Voltage | 20 | V | ||||
| PD | Power Dissipation | 110 | W | ||||
| EAS | Single pulse avalanche energy (a5) | 390 | mJ | ||||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 175 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | |||||||
| OFF Characteristics | |||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 60 | V | |||
| IDSS | Drain to Source Leakage Current | VDS=60V, VGS= 0V, Ta=25 | A | -- | -- | 1.0 | |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | A | -- | -- | 0.1 | |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | A | -- | -- | -0.1 | |
| ON Characteristics (a3) | |||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V, ID=40A | m | -- | 6.0 | 8.5 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | V | 1.0 | -- | 2.5 | |
| Dynamic Characteristics (a4) | |||||||
| gfs | Forward Transconductance | VDS=10V, ID=40A | S | 20 | -- | -- | |
| Ciss | Input Capacitance | VGS=0V, VDS=30V, f=1.0MHz | pF | -- | 4000 | -- | |
| Coss | Output Capacitance | pF | -- | 290 | -- | ||
| Crss | Reverse Transfer Capacitance | pF | -- | 210 | -- | ||
| Resistive Switching Characteristics (a4) | |||||||
| td(ON) | Turn-on Delay Time | VDD=30V, RL=1, VGS=10V, RG=3 | ns | -- | 8.5 | -- | |
| tr | Rise Time | ns | -- | 7 | -- | ||
| td(OFF) | Turn-Off Delay Time | ns | -- | 40 | -- | ||
| tf | Fall Time | ns | -- | 15 | -- | ||
| Qg | Total Gate Charge | VDD=30V, ID=20A, VGS=10V | nC | -- | 90 | -- | |
| Qgs | Gate to Source Charge | nC | -- | 9 | -- | ||
| Qgd | Gate to Drain (Miller) Charge | nC | -- | 18 | -- | ||
| Source-Drain Diode Characteristics | |||||||
| IS | Continuous Source Current (Body Diode) (a2) | A | -- | -- | 80 | ||
| VSD | Diode Forward Voltage (a3) | IS=80A, VGS=0V | V | -- | -- | 1.2 | |
| Thermal Characteristics | |||||||
| RJC | Junction-to-Case (a2) | /W | 1.36 | ||||
2410121435_GL-GL80N06A4_C2886420.pdf
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