Electronic circuit NPN transistor GOODWORK MMBT5551 ideal for medium power amplification switching

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

MMBT5551 NPN TRANSISTOR

The MMBT5551 is an NPN transistor, complementary to the MMBT5401, designed for medium power amplification and switching applications. It offers reliable performance for various electronic circuits.

Product Attributes

  • Marking Type number: MMBT5551
  • Marking code: G1

Technical Specifications

SymbolParameterTest conditionsMinTypMaxUnit
VCBOCollectorBase VoltageIC = 100uA, IE = 0180V
VCEOCollectorEmitter VoltageIC = 1 mA, IB = 0160V
VEBOEmitterBase VoltageIE = 10uA, IC = 06V
ICCollector Current Continuous600mA
PCCollector Power DissipationTa=25300mW
RthJAThermal Resistance From Junction To Ambient416/W
TJ,TstgOperation Junction and Storage Temperature Range-55+150
ICBOCollector cut-off currentVCB = 120V, IE = 01nA
IEBOEmitter cut-off currentVEB = 4V, IC =01nA
hFE1DC current gainVCE = 5V, IC =10mA100
hFE2DC current gainIC = 50mA, IB = 5mA100300
hFE3DC current gainVCE = 5V, IC = 50mA300
VCE(sat)1Collector-emitter saturation voltageIC = 10mA, IB =1mA0.15V
VCE(sat)2Collector-emitter saturation voltageIC = 50mA, IB = 5mA0.2V
VBE(sat)1Base-emitter saturation voltageIC = 10mA, IB =1mA0.6V
VBE(sat)2Base-emitter saturation voltageIC = 50mA, IB = 5mA0.8V
CobCollector output capacitanceVCB = 10V, IE = 0, f=1MHz10pF
fTTransition frequencyVCE = 10V, IC = 10mA, f=100MHz50MHz

2410121850_GOODWORK-MMBT5551_C909756.pdf

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