Electronic Component GOODWORK SS8050 NPN Bipolar Transistor with Emitter Base Breakdown Voltage 5V
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS8050
Package:
SOT-89
Product Description
Product Overview
The SS8050 is an NPN Power Amplifier Bipolar Transistor designed for power amplification applications. It offers key features suitable for various electronic circuits.
Product Attributes
- Brand: SS8050
- Package Type: SOT-89
- Transistor Type: Bipolar
- Polarity: NPN
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Min | Type | Max |
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | 40 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 25 | V | 25 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | 5 | ||
| Collector-Base Leakage Current | ICBO | 40 | nA | 100 | ||
| Collector-Emitter Punch Through Current | ICES | 20 | V | 100 | ||
| Emitter-Base Leakage Current | IEBO | 5 | V | 100 | ||
| DC Current Gain (VCE=1V, IC=100mA) | HFE1 | 85 | 400 | |||
| DC Current Gain (VCE=1V, IC=800mA) | HFE2 | 40 | ||||
| Collector-Emitter Saturation Voltage (IC=800mA, IB=80mA) | VCE(sat) | V | 0.5 | |||
| Base-Emitter Saturation Voltage (IC=800mA, IB=80mA) | VBE(sat) | V | 1.2 | |||
| Transition Frequency (VCE=10V, IC=50mA) | fT | MHz | 100 | |||
| Output Capacitance (VCB=10V, IE=0, f=1MHZ) | Cob | pF | 13 | |||
| Collector Current | IC | 1500 | mA | |||
| Power Dissipation (Ta=25) | PC(Ta=25) | 500 | mW | |||
| Thermal Resistance Junction-Ambient | RJA | 250 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 to +150 |
2504111708_GOODWORK-SS8050_C47500931.pdf
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