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quality Surface mount rectifier FUXINSEMI DHE1D with 200 volt rating and high forward surge current capability factory
quality Surface mount rectifier FUXINSEMI DHE1D with 200 volt rating and high forward surge current capability factory

Surface mount rectifier FUXINSEMI DHE1D with 200 volt rating and high forward surge current capability

Key Attributes
Model Number: DHE1D
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
1.4V@1.0A
Current - Rectified:
1A
Mfr. Part #:
DHE1D
Package:
SOD-123
Product Description

Product Overview

The DHE1A through DHE1M series are surface mount high efficiency rectifiers designed for a wide range of applications, offering voltages from 50V to 1000V. These rectifiers feature a glass passivated chip junction, built-in strain relief for automated placement, and high forward surge current capability. They are ideal for applications requiring low reverse leakage and high temperature soldering capabilities up to 260C.

Product Attributes

  • Brand: Fuxin Semiconductor
  • Case: JEDEC SOD-123 molded plastic body
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any
  • Flammability Classification: Underwriters Laboratory 94V-0

Technical Specifications

Model(s) VRRM (V) VRMS (V) VDC (V) I(AV) (A) IFSM (A) VF (V) IR (A) trr (ns) CJ (pF) RJA (C/W) TJ,TSTG (C)
DHE1A 50 35 50 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1B 100 70 100 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1D 200 140 200 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1G 400 280 400 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1J 600 420 600 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1K 800 560 800 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1M 1000 700 1000 1.0 75 1.0 5.0 (TA=25C) 50 20.0 85.0 -55 to +150
DHE1A THRU DHE1M 1.0A 8.3ms single half sine-wave 1.7 (at 1.0A) 50.0 (TA=100C) 75 (IF=0.5A, IR=1.0A, Irr=0.25A)

Package Dimensions (SOD-123)

Dimension Inches (Millimeters)
Length 1.00.2 (2.70.2)
Width 1.80.2 (3.70.2)
Height 0.60.25 (1.10.25)

Suggested Solder Pad Layout (SOD-123)

Pad Dimension A (inches) Dimension B (inches) Dimension C (inches)
1 0.075 (1.90) 0.055 (1.40) 0.075 (1.90)
2 0.075 (1.90) 0.055 (1.40) 0.075 (1.90)

Marking Code

Type Number Marking Code
DHE1A U1A
DHE1B U1B
DHE1D U1D
DHE1G U1G
DHE1J U1J
DHE1K U1K
DHE1M U1M

Soldering Conditions

Parameter Value
Storage Environment Temperature: 5C to 40C, Humidity: 55%25%
Reflow Soldering (Surface Mounted Devices)
  • Average ramp-up rate (Tsmin to Tsmax): <3C/sec
  • Preheat Temperature (Tsmin): 150C
  • Preheat Temperature (Tsmax): 200C
  • Time (tsmin to tsmax): 60-120 sec
  • Ramp-up Rate (Tsmax to Tp): <3C/sec
  • Time maintained above: Temperature (TL): 217C
  • Time maintained above: Time (tL): 60-260 sec
  • Peak Temperature (Tp): 255C (0/5 sec)
  • Time within 5C of actual Peak Temperature (tp): 10-30 sec
  • Ramp-down Rate: <6C/sec
  • Time 25C to Peak Temperature: <6 minutes

2304140030_FUXINSEMI-DHE1D_C915616.pdf

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