Silicon Carbide Schottky Diode FUXINSEMI F4C20120A 1.2kV High Frequency Switching TO220 Package
Key Attributes
Model Number:
F4C20120A
Product Custom Attributes
Reverse Leakage Current (Ir):
35uA@1.2kV
Voltage - DC Reverse (Vr) (Max):
1.2kV
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.5V@20A
Current - Rectified:
54.5A
Mfr. Part #:
F4C20120A
Package:
TO-220-2
Product Description
Product Overview
The F4C20120A is a 1.2kV Silicon Carbide Schottky Diode designed for high-frequency operation and efficient switching. It offers zero reverse recovery current, temperature-independent switching, and extremely fast switching speeds, leading to higher efficiency and reduced heat sink requirements. This diode is ideal for use in Switch Mode Power Supplies (SMPS), boost diodes in PFC or DC/DC stages, free-wheeling diodes in inverter stages, and AC/DC converters. Its unipolar rectification replaces bipolar diodes, and it can be paralleled without thermal runaway.
Product Attributes
- Brand: Fuxin Semiconductor
- Material: Silicon Carbide (SiC)
- Package Type: TO-220-2 (TO-220AC)
- RoHS Compliant: Pb e3
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Part Number | F4C20120A | ||||
| Package Marking | C20120A | ||||
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | ||
| VRSM | Surge Peak Reverse Voltage | 1300 | V | ||
| VR | DC Peak Reverse Voltage | 1200 | V | ||
| IF | Continuous Forward Current | 54.5 | A | TC=25C | Fig. 3 |
| 26 | A | TC=135C | Fig. 3 | ||
| 20 | A | TC=150C | Fig. 3 | ||
| IFRM | Repetitive Peak Forward Surge Current | 91 | A | TC=25C, tP=10 ms, Half Sine Pulse | |
| 61 | A | TC=110C, tP=10 ms, Half Sine Pulse | |||
| IFSM | Non-Repetitive Forward Surge Current | 130 | A | TC=25C, tP=10 ms, Half Sine Pulse | Fig. 8 |
| 110 | A | TC=110C, tP=10 ms, Half Sine Pulse | Fig. 8 | ||
| IF,Max | Non-Repetitive Peak Forward Current | 1150 | A | TC=25C, tP=10 s, Pulse | Fig. 8 |
| 950 | A | TC=110C, tP=10 s, Pulse | Fig. 8 | ||
| Ptot | Power Dissipation | 250 | W | TC=25C | Fig. 4 |
| 112.5 | W | TC=110C | Fig. 4 | ||
| dV/dt | Diode dV/dt ruggedness | 200 | V/ns | VR=0-960V | |
| idt | it value | 84.5 | As | TC=25C, tP=10 ms | |
| 60.5 | As | TC=110C, tP=10 ms | |||
| TJ | Operating Junction Range | -55 to +175 | C | ||
| Tstg | Storage Temperature Range | -55 to +135 | C | ||
| Mounting Torque | 1 | lbf-in | M3 Screw | ||
| Mounting Torque | 8.8 | Nm | 6-32 Screw | ||
| RJC | Thermal Resistance from Junction to Case | 0.6 | C/W | Fig. 9 | |
| VF | Forward Voltage | 1.5 | V | IF = 20 A, TJ=25C | Typ. |
| 2.2 | V | IF = 20 A, TJ=175C | Max. | ||
| IR | Reverse Current | 35 | A | VR = 1200 V, TJ=25C | Typ. |
| 65 | A | VR = 1200 V, TJ=175C | Max. | ||
| QC | Total Capacitive Charge | 99 | nC | VR = 800 V, IF = 20A, di/dt = 200 A/s, TJ = 25C | Typ. Fig. 5 |
| C | Total Capacitance | 1500 | pF | VR = 0 V, TJ = 25C, f = 1 MHz | Typ. Fig. 6 |
| 93 | pF | VR = 400 V, TJ = 25C, f = 1 MHz | Typ. Fig. 6 | ||
| 67 | pF | VR = 800 V, TJ = 25C, f = 1 MHz | Typ. Fig. 6 | ||
| EC | Capacitance Stored Energy | 28 | J | VR = 800 V | Typ. Fig. 7 |
Note: This is a majority carrier diode, so there is no reverse recovery charge.
2409302330_FUXINSEMI-F4C20120A_C784612.pdf
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