Switching and amplification transistor GOODWORK MMDT3906DW epitaxial planar die construction SOT363
Key Attributes
Model Number:
MMDT3906DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMDT3906DW
Package:
SOT-363
Product Description
Product Overview
The MMDT3906DW is an epitaxial planar die construction transistor ideal for low power amplification and switching applications. It is housed in a SOT-363 package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.2 | W | ||
| Thermal Resistance. Junction to Ambient Air | RJA | 625 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| Base cut-off current | IEBO | VEB=-5V,IC=0 | -50 | nA | ||
| DC current gain | hFE(1) | VCE=-1V,IC=-0.1mA | 60 | |||
| hFE(2) | VCE=-1V,IC=-1mA | 80 | ||||
| hFE(3) | VCE=-1V,IC=-10mA | 100 | 300 | |||
| hFE(4) | VCE=-1V,IC=-50mA | 60 | ||||
| hFE(5) | VCE=-1V,IC=-100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA,IB=-1mA | -0.25 | V | ||
| VCE(sat)2 | IC=-50mA,IB=-5mA | -0.4 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| VBE(sat)2 | IC=-50mA,IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K | 4 | dB | ||
| Delay time | td | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Rise time | tr | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Storage time | tS | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 225 | nS | ||
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS |
2410121546_GOODWORK-MMDT3906DW_C22470865.pdf
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