PNP small signal transistor GOODWORK MMBTA55 designed for amplification and switching applications
Key Attributes
Model Number:
MMBTA55
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA55
Package:
SOT-23
Product Description
Product Overview
The MMBTA55 / MMBTA56 are PNP small signal surface mount transistors featuring epitaxial planar die construction. They are ideal for low power amplification and switching applications. Complementary NPN types (MMBTA05 / MMBTA06) are also available.
Product Attributes
- Brand: DEMACHEL
- Package Type: SOT-23
- Marking (MMBTA55): 2H
- Marking (MMBTA56): 2GM
Technical Specifications
| Characteristic | Symbol | MMBTA55 | MMBTA56 | Unit | Test Condition | |
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -60 | -80 | V | @TA = 25C unless otherwise specified | |
| Collector-Emitter Voltage | VCEO | -60 | -80 | V | @TA = 25C unless otherwise specified | |
| Emitter-Base Voltage | VEBO | -4.0 | V | @TA = 25C unless otherwise specified | ||
| Collector Current - Continuous | IC | -500 | mA | @TA = 25C unless otherwise specified | ||
| Power Dissipation | Pd | 300 | mW | @TA = 25C unless otherwise specified | ||
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | @TA = 25C unless otherwise specified | ||
| Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 | C | @TA = 25C unless otherwise specified | ||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | -80 | V | IC = -100A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | -80 | V | IC = -1.0mA, IB = 0 | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -4.0 | V | IE = -100A, IC = 0 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -60V, IE = 0 (MMBTA55); VCB = -80V, IE = 0 (MMBTA56) | ||
| Collector Cutoff Current | ICEX | -100 | nA | VCE = -60V, IBO = 0V (MMBTA55); VCE = -80V, IBO = 0V (MMBTA56) | ||
| DC Current Gain | hFE | 100 | IC = -10mA, VCE = -1.0V | |||
| DC Current Gain | hFE | IC = -100mA, VCE = -1.0V | ||||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.25 | V | IC = -100mA, IB = -10mA | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -1.2 | V | IC = -100mA, VCE = -1.0V | ||
| Current Gain-Bandwidth Product | fT | 50 | MHz | VCE = -1.0V, IC = -100mA, f = 100MHz | ||
2504101957_GOODWORK-MMBTA55_C42417812.pdf
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