npn plastic encapsulated transistor GOODWORK PBSS4350Z-GK ideal for driving leds relays and motors
Key Attributes
Model Number:
PBSS4350Z-GK
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
PBSS4350Z-GK
Package:
SOT-223
Product Description
Product Overview
The PBSS4350Z is a plastic-encapsulated NPN transistor designed for power management and peripheral driver applications. It offers a low collector-emitter saturation voltage, high collector current capability, and high DC current gain at high collector currents, leading to increased efficiency and reduced heat generation. This transistor is a complement to the PBSS4350Z. Its applications include DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), and driving low-voltage loads like lamps, LEDs, relays, buzzers, and motors.
Product Attributes
- Brand: PBSS4350Z
- Type: NPN Plastic-Encapsulated Transistor
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage (Breakdown) | BVCBO | IC = 100A, IE = 0 | 60 | V | ||
| Collector-Emitter Voltage (Breakdown) | BVCEO | IC = 1mA, IB = 0 | 50 | V | ||
| Emitter-Base Voltage (Breakdown) | BVEBO | IE = 100A, IC = 0 | 6 | V | ||
| Collector Current (DC) | IC | 3 | A | |||
| Peak Collector Current | ICM | 5 | A | |||
| Collector Power Dissipation | PC | 1.35 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector Cut-off Current | ICBO | VCB = 50V, IB = 0 | 100 | nA | ||
| Emitter Cut-off Current | IEBO | VEB = 5V, IC = 0 | 100 | nA | ||
| DC Current Gain (hFE) | hFE | VCE= 2V, IC= 500mA | 200 | |||
| VCE= 2V, IC= 1A | 200 | |||||
| VCE= 2V, IC= 2A | 100 | |||||
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | IC = 500mA, IB = 50mA | -90 | mV | ||
| IC = 1A, IB = 50mA | -170 | mV | ||||
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | IC = 2A, IB = 200mA | -290 | mV | ||
| Equivalent On-Resistance (RCEsat) | RCEsat | IC = 2A, IB = 200mA | 145 | m | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | IC = -2A, IB = -200mA | -1.2 | V | ||
| Base-Emitter Turn-on Voltage (VBE(on)) | VBE(on) | VCE= 2V, IC = 1A | 1 | V | ||
| Transition Frequency (fT) | fT | VCE = 5V, IC = 100mA | 100 | MHz | ||
| Collector Capacitance (CC) | CC | VCB = 10V, IE=0, f=1MHz | 30 | pF | ||
| Resistance Junction to Ambient (RJA) | RJA | Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 1cm | 92 | /W | ||
| Resistance Junction to Ambient (RJA) | RJA | Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 6cm | 62.5 | /W |
2509151638_GOODWORK-PBSS4350Z-GK_C51912412.pdf
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