High Saturation Current N Channel MOSFET FUXINSEMI 2N7002KD for Portable Device Applications
Key Attributes
Model Number:
2N7002KD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-
RDS(on):
5.3Ω@4.5V,0.2A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002KD
Package:
SOT-363
Product Description
Product Overview
The 2N7002KD is an N-Channel SMD MOSFET featuring a high-density cell design for ultra-low on-resistance. It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Fuxin Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: ESD Protected
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | ±20 | V | ||||
| ID | 0.34 | A | ||||
| PD | 0.15 | W | ||||
| RJA | 833 | /W | ||||
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =10A | 60 | V | ||
| IDSS | VDS =48V,VGS = 0V | 1 | µA | |||
| IGSS | VGS =±20V, VDS = 0V | ±10 | µA | |||
| VGS(th) | VDS =VGS, ID =250µA | 1.0 | 2.5 | V | ||
| RDS(on) | VGS =10V, ID =0.5A | 0.9 | 5 | Ω | ||
| RDS(on) | VGS =4.5V, ID =0.2A | 1.1 | 5.3 | Ω | ||
| Dynamic Characteristics | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Coss | 30 | pF | ||||
| Crss | 10 | pF | ||||
| Switching Characteristics | td(on) | VDD=50V,VGS=10V, RL=250Ω,RGEN=50Ω | 10 | nS | ||
| td(off) | 15 | nS | ||||
| Diode Characteristics | VDS | VGS =0V, IS=0.3A | 1.5 | V |
2010151636_FUXINSEMI-2N7002KD_C880912.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
