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quality High speed switching diode FUXINSEMI BAT48ZFILM-FS with lead free halogen free RoHS compliant design factory
quality High speed switching diode FUXINSEMI BAT48ZFILM-FS with lead free halogen free RoHS compliant design factory

High speed switching diode FUXINSEMI BAT48ZFILM-FS with lead free halogen free RoHS compliant design

Key Attributes
Model Number: BAT48ZFILM-FS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@30V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
BAT48ZFILM-FS
Package:
SOD-123
Product Description

Product Overview

The BAT48ZFILM-FS is a small signal Schottky diode designed for low current rectification and high-speed switching applications. It features an extremely small surface mount type with a low forward voltage drop. Constructed with a silicon epitaxial planar chip and a metal silicon junction, this lead-free and halogen-free component meets RoHS requirements. Its molded plastic SOD-123 case and solder-plated terminals ensure suitability for various mounting positions.

Product Attributes

  • Brand: Fuxin (implied by www.fuxinsemi.com)
  • Type: Small Signal Schottky Diode
  • Material: Silicon epitaxial planar chip, metal silicon junction
  • Flame Retardant: UL94-V0 rated
  • Certifications: RoHS compliant (Lead-free parts), Halogen-free
  • Case: Molded plastic, SOD-123
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Indicated by cathode band
  • Mounting Position: Any
  • Marking Type Number: BAT48ZFILM-FS
  • Marking Code: S4

Technical Specifications

Parameter Conditions Symbol Unit Value
Peak repetitive reverse voltage VRRM V 40
Working peak reverse voltage VRWM V 40
DC blocking voltage VR V 40
RMS reverse voltage VR(RMS) V 28
Average rectified output current IF(AV) mA 350
Non-repetitive peak forward surge current @ t=8.3mS IFSM A 2
Total device dissipation PD mW 400
Thermal resistance Junction to ambient RJA C/W 250
Operating junction temperature range TJ C -55 to +125
Storage temperature range TSTG C -55 to +125
Reverse breakdown voltage IR=100A V(BR)R V 40
Forward voltage IF=20mA VF V 0.37 (TYP)
Forward voltage IF=200mA VF V 0.60 (MAX)
Reverse leakage current VR=30V IR A 5.0 (MAX)
Typical junction capacitance VR=0V, f=1.0MHz CJ pF 50
Reverse recover time IF=IR=200mA, Irr=0.1 X IR, RL=100 trr nS 1

2512291555_FUXINSEMI-BAT48ZFILM-FS_C7436546.pdf

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