1700 Volt Silicon Carbide Schottky Rectifier FUXINSEMI F3C10170D Diode for Switching and Thermal Stability
Key Attributes
Model Number:
F3C10170D
Product Custom Attributes
Reverse Leakage Current (Ir):
20uA@1.7kV
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.7kV
Voltage - Forward(Vf@If):
1.7V@10A
Current - Rectified:
14.4A
Mfr. Part #:
F3C10170D
Package:
TO-247-2
Product Description
Product Overview
The F3C10170D is a 1700-Volt Silicon Carbide Schottky Rectifier designed for high-frequency operation with temperature-independent switching behavior. This diode offers zero reverse recovery current and zero forward recovery voltage, leading to essentially no switching losses, higher efficiency, and reduced heat sink requirements. It is ideal for replacing bipolar rectifiers with unipolar rectifiers and allows for parallel device operation without thermal runaway. The diode is halogen-free and RoHS compliant.
Product Attributes
- Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
- Material: Silicon Carbide (SiC)
- Package: TO-247-2
- Certifications: Pb-free, e3, Halogen-Free, RoHS Compliant
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|
| Part Number | F3C10170D | |||
| Package Marking | C10170D | |||
| Repetitive Peak Reverse Voltage (VRRM) | 1700 | V | ||
| Surge Peak Reverse Voltage (VRSM) | 1700 | V | ||
| DC Blocking Voltage (VDC) | 1700 | V | ||
| Continuous Forward Current (IF) | 14.4 | A | TC<135C | |
| Repetitive Peak Forward Surge Current (IFRM) | 45 | A | TC=25C, tP=10 ms, Half Sine Wave, D=1 | |
| Repetitive Peak Forward Surge Current (IFRM) | 26 | A | TC=110C, tP=10 ms, Half Sine Wave, D=1 | |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 55 | A | TC=25C, tP=10ms, Half Sine Wave, D=1 | |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 41 | A | TC=110C, tP=10 ms, Half Sine Wave, D=1 | |
| Power Dissipation (Ptot) | 231 | W | TC=25C | |
| Power Dissipation (Ptot) | 100 | W | TC=110C | |
| Maximum Case Temperature (Tc) | 135 | C | ||
| Operating Junction Range (TJ) | -55 to +175 | C | ||
| Storage Temperature Range (Tstg) | -55 to +135 | C | ||
| Mounting Torque | 1.8 | Nm | M3 Screw | |
| Mounting Torque | 8.8 | lbf-in | 6-32 Screw | |
| Forward Voltage (VF) | 1.7 | V | IF = 10 A, TJ=25C | Typ. |
| Forward Voltage (VF) | 3.2 | V | IF = 10 A, TJ=175C | Max. |
| Reverse Current (IR) | 20 | A | VR = 1700 V, TJ=25C | Typ. |
| Reverse Current (IR) | 100 | A | VR = 1700 V, TJ=175C | Max. |
| Total Capacitive Charge (QC) | 96 | nC | VR = 1700 V, IF = 10 A, di/dt = 200 A/s, TJ = 25C | Typ. |
| Total Capacitance (C) | 827 | pF | VR = 0 V, TJ = 25C, f = 1 MHz | Typ. |
| Total Capacitance (C) | 78 | pF | VR = 200 V, TJ = 25C, f = 1 MHz | Typ. |
| Total Capacitance (C) | 41 | pF | VR = 800 V, TJ = 25C, f = 1 MHz | Typ. |
| Thermal Resistance Junction to Case (RJC) | 0.65 | C/W | Typ. |
3D Package Dimensions
| Symbol | Inches | Millimeters | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 0.185 | 0.209 | 4.70 | 5.31 |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 |
| b | 0.040 | 0.055 | 1.02 | 1.40 |
| b1 | 0.065 | 0.088 | 1.65 | 2.23 |
| C | 0.016 | 0.031 | 0.41 | 0.79 |
| D | 0.819 | 0.845 | 20.80 | 21.46 |
| E | 0.61 | 0.640 | 15.49 | 16.26 |
| e | 0.215 | 0.215 | 5.46 | 5.46 |
| L | 0.78 | 0.80 | 19.81 | 20.32 |
| L1 | 0.164 | 0.176 | 4.17 | 4.47 |
| P | 0.140 | 0.144 | 3.56 | 3.66 |
| Q | 0.212 | 0.244 | 5.38 | 6.20 |
| R | 0.135 | 0.157 | 3.43 | 3.99 |
| S | 0.278 | 0.288 | 7.06 | 7.32 |
| V | 0.652 | 0.662 | 16.56 | 16.81 |
| W | 0.000 | 0.006 | 0.00 | 0.15 |
Package: TO-247-2
PIN 1
PIN 2
CASE
2108072030_FUXINSEMI-F3C10170D_C2844164.pdf
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