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quality Power MOSFET N Channel TO220AB Package Featuring GL GLZ24A8 Suitable for Power Switching Applications factory
quality Power MOSFET N Channel TO220AB Package Featuring GL GLZ24A8 Suitable for Power Switching Applications factory

Power MOSFET N Channel TO220AB Package Featuring GL GLZ24A8 Suitable for Power Switching Applications

Key Attributes
Model Number: GLZ24A8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
33mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
500pF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
GLZ24A8
Package:
TO-220AB-3
Product Description

Product Overview

The GLZ24A8 is a high-performance N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The device is packaged in a RoHS-compliant TO-220AB package.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
  • Package Type: TO-220AB
  • RoHS Compliant: Yes
  • Technology: Advanced Trench
  • Channel Type: N-Channel

Technical Specifications

Symbol Parameter Test Conditions Rating Units
VDSS Drain-to-Source Voltage (Tc= 25 unless otherwise specified) 60 V
ID Continuous Drain Current (Tc= 25 unless otherwise specified) 20 A
ID Continuous Drain Current TC = 100 C 14 A
IDM Pulsed Drain Current 80 A
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy a2 80 mJ
EAR Avalanche Energy, Repetitive a1 4.5 mJ
IAR Avalanche Current a1 11 A
dv/dt Peak Diode Recovery dv/dt a3 5.0 V/ns
PD Power Dissipation 50 W
TJ, Tstg Operating Junction and Storage Temperature Range 55 to 175
TL Maximum Temperature for Soldering 300
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250A 60 V
BVDSS/TJ Bvdss Temperature Coefficient ID=250uA,Reference25 0.1 V/
IDSS Drain to Source Leakage Current VDS = 60V, VGS= 0V, Ta = 25 1 A
IDSS Drain to Source Leakage Current VDS =48V, VGS= 0V, Ta = 125 250 A
IGSS(F) Gate to Source Forward Leakage VGS =+20V 1 A
IGSS(R) Gate to Source Reverse Leakage VGS =-20V -1 A
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=10A 23 m
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 - 2.5 V
td(ON) Turn-on Delay Time ID =10A VDD = 30V VGS = 10V RG = 3.0 5 ns
tr Rise Time 2.6 ns
td(OFF) Turn-Off Delay Time 16 ns
tf Fall Time 2.3 ns
Qg Total Gate Charge ID =10A VDD =30V VGS = 10V 23 nC
Qgs Gate to Source Charge 4.5 nC
Qgd Gate to Drain (Miller)Charge 6 nC
IS Continuous Source Current (Body Diode) 20 A
ISM Maximum Pulsed Current (Body Diode) 80 A
VSD Diode Forward Voltage IS=20A,VGS=0V 1.5 V
trr Reverse Recovery Time IS=20A,Tj = 25C dIF/dt=100A/us, VGS=0V 30 ns
Qrr Reverse Recovery Charge 49 nC
RJc Junction-to-Case 2.5 /W
RJA Junction-to-Ambient 62 /W

2411220126_GL-GLZ24A8_C2886422.pdf

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