Electronic Switching and Amplification Transistor GOODWORK S9014 NPN Silicon General Purpose Device

Key Attributes
Model Number: S9014
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9014
Package:
SOT-23
Product Description

General Purpose Transistor NPN Silicon S9014

The S9014 is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary functionality to the S9015 (not specified in this document). This transistor is suitable for a wide range of switching and amplification circuits.

Product Attributes

  • Type Number: S9014
  • Marking Code: J6
  • Material: Silicon
  • Technology: NPN

Technical Specifications

Characteristic Symbol Min Max Unit Conditions
CollectorEmitter Voltage VCEO 45 Vdc
CollectorBase Voltage VCBO 50 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 100 mAdc
Total Device Dissipation (FR5 Board) PD 200 mW TA = 25C
CollectorEmitter Breakdown Voltage V(BR)CEO 45 Vdc IC = .1.0 mAdc, IB = 0
CollectorBase Breakdown Voltage V(BR)CBO 50 Vdc IC = 100 Adc, IE = 0
EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc IE = 100 Adc, IC = 0
Collector cut-off current ICBO 0.1 uAdc VCB= 50 Vdc, IE = 0
Collector cut-off current IEO 1 uAdc VCE = 35Vdc, IB = 0
Emitter cut-off current IEBO 0.1 uAdc VEB = 3Vdc, IC = 0
DC Current Gain hFE 200 1000 IC =1.0 mAdc, VCE =5 Vdc
CollectorEmitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 100 mAdc, IB = 5 mAdc
BaseEmitter Saturation Voltage VBE(sat) 1.0 Vdc IC = 100 mAdc, IB = 5mAdc
CurrentGain Bandwidth Product fT 150 MHz IC =10mAdc, VCE= 5.0Vdc, f =30MHz

2504211158_GOODWORK-S9014_C909750.pdf

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