PBSS4350X GK NPN Transistor Plastic Encapsulated Designed for Switching in Battery Chargers and LCDs
Key Attributes
Model Number:
PBSS4350X-GK
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
PBSS4350X-GK
Package:
SOT-89
Product Description
Product Overview
The PBSS4350X is an NPN plastic-encapsulated transistor designed for various applications including supply line switching, battery chargers, DC/DC converters, and LCD backlighting. It offers a low collector-to-emitter saturation voltage, high current capability, and higher efficiency leading to less heat generation and reduced printed-circuit board requirements. This transistor complements the PBSS5350X.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | BVCBO | IC = 100A, IE = 0 | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA, IB = 0 | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 100A, IC = 0 | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V, IE = 0 | - | - | 100 | nA |
| Emitter cut-off current | IEBO | VEB =5V, IC = 0 | - | - | 100 | nA |
| DC current gain | hFE | VCE= 2V, IB= 0.1A | 300 | - | - | - |
| VCE= 2V, IB= 0.5A | 300 | - | - | - | ||
| VCE= 2V, IB= 1A | 300 | - | 700 | - | ||
| VCE= 2V, IB= 2A | - | - | 200 | - | ||
| VCE= -2V, IB= -3A | - | - | 100 | - | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 500mA, IB = 50mA | - | 80 | - | mV |
| IC = 1A, IB = 50mA | - | 160 | - | mV | ||
| IC = 2A, IB = 100mA | - | 280 | - | mV | ||
| IC = 2A, IB = 200mA | - | 260 | - | mV | ||
| IC = 3A, IB = 300mA | - | 370 | - | mV | ||
| Equivalent on-resistance | RCE(sat) | IC = 2A, IB = 200mA | - | 130 | - | m |
| Base-emitter saturation voltage | VBE(sat) | IC = 2A, IB = 100mA | - | 1.1 | - | V |
| IC = 3A, IB = 300mA | - | 1.2 | - | V | ||
| Base-emitter turn on voltage | VBE(on) | VCE= 2V, IC= 1A | - | 1.1 | - | V |
| Transition frequency | fT | VCE = 5V, IE = 100mA f=100MHz | - | 100 | - | MHz |
| Collector output Capacitance | Cob | VCB = 10V,IE = 0,f=1MHz | - | 35 | - | pF |
| Parameter | Symbol | Value | Unit |
| Total power dissipation | Ptot | 0.55 | W |
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | -55150 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 225 | / W |
| 125 | / W | ||
| 90 | / W | ||
| 80 | / W | ||
| Thermal resistance from junction to soldering point | Rth(j-s) | 16 | / W |
2509161435_GOODWORK-PBSS4350X-GK_C51912410.pdf
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