Silicon Epitaxial Planar Transistor GOODWORK MMBT3906W Perfect for Amplifier and Switching Solutions
Key Attributes
Model Number:
MMBT3906W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3906W
Package:
SOT-323
Product Description
MMBT3906W PNP Silicon Epitaxial Planar Transistor
The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| DC Current Gain | hFE | 80 | - | at -VCE = 1 V, -IC = 1 mA |
| 100 | - | at -VCE = 1 V, -IC = 10 mA | ||
| 60 | - | at -VCE = 1 V, -IC = 50 mA | ||
| 30 | - | at -VCE = 1 V, -IC = 100 mA | ||
| - | 300 | - | ||
| Collector Emitter Cutoff Current | ICES | - | 50 nA | at -VCE = 30 V |
| Emitter Base Cutoff Current | IEBO | - | 50 nA | at -VEB = 3 V |
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | - V | at -IC = 10 A |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 40 | - V | at -IC = 1 mA |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | - V | at -IE = 10 A |
| Collector Emitter Saturation Voltage | -VCE(sat) | - | 0.25 V | at -IC = 10 mA, -IB = 1 mA |
| - | 0.4 V | at -IC = 50 mA, -IB = 5 mA | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 0.65 | - 0.85 V | at -IC = 10 mA, -IB = 1 mA |
| - | 0.95 V | at -IC = 50 mA, -IB = 5 mA | ||
| Transition Frequency | fT | 250 | - MHz | at -VCE = 20 V, IE = 10 mA, f = 100 MHz |
| Collector Output Capacitance | Cob | - | 4.5 pF | at -VCB = 10 V, f = 100 KHz |
| Delay Time | td | - | 35 ns | at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA |
| Rise Time | tr | - | 35 ns | at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA |
| Storage Time | tstg | - | 225 ns | at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA |
| Fall Time | tf | - | 75 ns | at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA |
| Parameter | Symbol | Value | Unit |
| Collector Base Voltage | -VCBO | 40 | V |
| Collector Emitter Voltage | -VCEO | 40 | V |
| Emitter Base Voltage | -VEBO | 5 | V |
| Collector Current | -IC | 200 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | OC |
| Storage Temperature Range | Tstg | -55 to +150 | OC |
2410121513_GOODWORK-MMBT3906W_C22466882.pdf
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