Load Switching N Channel MOSFET FUXINSEMI FS3400 Featuring Trench Process and Compact SOT 23 Package
Key Attributes
Model Number:
FS3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
-
Input Capacitance(Ciss):
620pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
FS3400
Package:
SOT-23(TO-236)
Product Description
Product Overview
The FS3400 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulsed Drain Current | IDM | 30 | A | |||
| Power Dissipation | PD | (Ta=25) | 1.4 | W | ||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.7 | 0.9 | 1.4 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =2.9A | 28 | 35 | mΩ | |
| VGS =4.5V, ID =2.9A | 31 | 40 | mΩ | |||
| VGS =2.5V, ID =4A | 45 | 50 | mΩ | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 620 | pF | ||
| Output Capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 100 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 80 | pF | ||
| Total Gate Charge | Qg | VDS =15V,VGS =4.5V, ID =4.5A | 9.5 | nC | ||
| Gate-Source Charge | Qgs | VDS =15V,VGS =4.5V, ID =4.5A | 1.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS =15V,VGS =4.5V, ID =4.5A | 3 | nC | ||
| Turn-on delay time | td(on) | VDD=15V, VGS =10V, RGEN=3Ω, ID=2.9A | 3.3 | nS | ||
| Turn-on rise time | tr | VDD=15V, VGS =10V, RGEN=3Ω, ID=2.9A | 4.8 | nS | ||
| Turn-off delay time | td(off) | VDD=15V, VGS =10V, RGEN=3Ω, ID=2.9A | 26 | nS | ||
| Turn-off fall time | tf | VDD=15V, VGS =10V, RGEN=3Ω, ID=2.9A | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Current | IS | 5.8 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=2.9A | 1.2 | V | ||
2108072030_FUXINSEMI-FS3400_C2844158.pdf
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