Comprehensive output characteristics and on resistance versus temperature data for FUXINSEMI C2M0080120D device
Key Attributes
Model Number:
C2M0080120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
192W
Gate Charge(Qg):
71nC
Mfr. Part #:
C2M0080120D
Package:
TO-247-3
Product Description
Product Overview
This document presents the output characteristics, on-resistance, 3rd quadrant characteristics, stored energy, and capacitance versus drain-source voltage for a semiconductor device. The data is presented across various junction temperatures and gate voltages, illustrating the device's performance under different operating conditions.
Product Attributes
- Brand: Fuxinsemi
- Website: www.fuxinsemi.com
- Document Version: Ver2.1
Technical Specifications
| Figure | Description | Conditions | X-Axis | Y-Axis |
| 2 | Output Characteristics | TJ = 25 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 5 | On-Resistance vs. Drain Current For Various Temperatures | VGS = 20 V, tp < 200 s | Drain-Source Current, IDS (A) | On Resistance, RDS On (mOhms) |
| 1 | Output Characteristics | TJ = -55 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 3 | Output Characteristics | TJ = 150 C, tp = < 200 s | Drain-Source Voltage, VDS (V) | Drain-Source Current, IDS (A) |
| 4 | Normalized On-Resistance vs. Temperature | IDS = 20 A, VGS = 20 V, tp < 200 s | Junction Temperature, TJ (C) | On Resistance, RDS On (P.U.) |
| 6 | On-Resistance vs. Temperature For Various Gate Voltage | IDS = 20 A, tp < 200 s | Junction Temperature, TJ (C) | On Resistance, RDS On (mOhms) |
| 15 | 3rd Quadrant Characteristic at 150 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 13 | 3rd Quadrant Characteristic at -55 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 14 | 3rd Quadrant Characteristic at 25 C | tp < 200 s | Drain-Source Voltage VDS (V) | Drain-Source Current, IDS (A) |
| 16 | Output Capacitor Stored Energy | N/A | Drain to Source Voltage, VDS (V) | Stored Energy, EOSS (J) |
| 17 | Capacitances vs. Drain-Source Voltage (0 - 200V) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Drain-Source Voltage, VDS (V) | Capacitance (pF) |
| 18 | Capacitances vs. Drain-Source Voltage (0 - 1000V) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Drain-Source Voltage, VDS (V) | Capacitance (pF) |
2403211444_FUXINSEMI-C2M0080120D_C22365189.pdf
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