Surface Mount Device N Channel MOSFET FUXINSEMI SI2310A Featuring Low On Resistance and High Current
Key Attributes
Model Number:
SI2310A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
100mΩ@10V;120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
330pF
Gate Charge(Qg):
5.1nC@10V
Mfr. Part #:
SI2310A
Package:
SOT-23
Product Description
SI2310A N-Channel SMD MOSFET
The SI2310A is an N-Channel Surface Mount Device (SMD) MOSFET designed for various electronic applications. Its characteristics are detailed across several plots illustrating its electrical performance under different conditions.
Technical Specifications
| Parameter | Condition | Value |
| Drain Current (ID) | ID=3A, Ta=25 | Pulsed |
| Drain Current (ID) | VGS=5V, 4V, 3.0V | Pulsed |
| Drain Current (ID) | VGS=2.5V | Pulsed |
| Drain Current (ID) | VGS=2.0V | Pulsed |
| Drain Current (ID) | VDS=5.0V, Pulsed | Ta=100, Ta=25 |
| Drain Current (ID) | ID=250uA | Pulsed |
| On-Resistance (RDS(ON)) | ID=3A, VGS=10V, Ta=25 | 0.5 m |
| On-Resistance (RDS(ON)) | ID=3A, VGS=4.5V, Ta=25 | 0.5 m |
| On-Resistance (RDS(ON)) | ID=3A, VGS=10V, Pulsed | 0.5 m |
| On-Resistance (RDS(ON)) | ID=3A, VGS=4.5V, Pulsed | 0.5 m |
| Threshold Voltage (VTH) | ID=250uA | VGS=5V, 4V, 3.0V, 2.5V, 2.0V |
| Source Current (IS) | VSD=5.0V, Pulsed | Ta=100, Ta=25 |
2303231100_FUXINSEMI-SI2310A_C5380684.pdf
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