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quality Power Switching N Channel MOSFET GL GL150N03AD Featuring Low Rdson and RoHS Compliant QFN56 Package factory
quality Power Switching N Channel MOSFET GL GL150N03AD Featuring Low Rdson and RoHS Compliant QFN56 Package factory

Power Switching N Channel MOSFET GL GL150N03AD Featuring Low Rdson and RoHS Compliant QFN56 Package

Key Attributes
Model Number: GL150N03AD
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
3.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
420pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
4nF
Pd - Power Dissipation:
78W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
GL150N03AD
Package:
QFN(5x6)
Product Description

Product Overview

The GL150N03AD is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% tested for single pulse avalanche energy. It comes in a RoHS-compliant QFN56 package.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
  • Channel Type: N-Channel
  • Technology: Advanced Trench
  • Package: QFN56
  • Compliance: RoHS Standard

Technical Specifications

Symbol Parameter Test Conditions Rating Units Min. Typ. Max.
Absolute Maximum Ratings (Tc= 25 unless otherwise specified)
VDSS Drain-to-Source Voltage 30 V
ID Continuous Drain Current 150 A
ID Continuous Drain Current TC = 100 C 90 A
IDM Pulsed Drain Current 480 A
VGS Gate-to-Source Voltage 20 V
PD Power Dissipation 78 W
TJ, Tstg Operating Junction and Storage Temperature Range 175, 55 to 150
TL Maximum Temperature for Soldering 300
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250A 30 V
BVDSS/TJ Bvdss Temperature Coefficient ID=250uA,Reference25 V/ 0.1
IDSS Drain to Source Leakage Current VDS=30V,VGS= 0V,Ta=25 A 1
IDSS Drain to Source Leakage Current VDS=24V,VGS=0V,Ta=125 A 250
IGSS(F) Gate to Source Forward Leakage VGS=+20V A 1
IGSS(R) Gate to Source Reverse Leakage VGS=-20V A -1
ON Characteristics
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=15A m 1.9 2.5
RDS(ON) Drain-to-Source On-Resistance VGS=4.5V,ID=12A m 2.5 3.5
VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250A V 1 3
Dynamic Characteristics
gfs Forward Transconductance VDS=5V,ID=20A 15 S
Ciss Input Capacitance VGS=0V,VDS=10V f=1.0MHz pF 4000
Coss Output Capacitance pF 100
Crss Reverse Transfer Capacitance pF 420
Resistive Switching Characteristics
td(ON) Turn-on Delay Time VDD=10V,ID=25A VGS=5V,RG=1.8 ns 7
tr Rise Time ns 18
td(OFF) Turn-Off Delay Time ns 30
tf Fall Time ns 17
Qg Total Gate Charge VDD=10V, ID=25A VGS=10V nC 28
Qgs Gate to Source Charge nC 7
Qgd Gate to Drain (Miller)Charge nC 6.8
Source-Drain Diode Characteristics
IS Continuous Source Current (Body Diode) A 120
ISM Maximum Pulsed Current (Body Diode) A 240
VSD Diode Forward Voltage IS=12A,VGS=0V V 1.5
trr Reverse Recovery Time IS=10A,Tj = 25C dIF/dt=100A/us,VGS=0V ns 30
Qrr Reverse Recovery Charge Pulse width tp380s,2% nC 44
Thermal Characteristics
RJc Junction-to-Case /W 1.6

2409272301_GL-GL150N03AD_C2886428.pdf

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