Power Switching Silicon N Channel VDMOSFET GL GL25N40A8 Featuring Low Gate Charge and TO 220 Package
Key Attributes
Model Number:
GL25N40A8
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
25A
RDS(on):
155mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
320pF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
2.65nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
GL25N40A8
Package:
TO-220
Product Description
Product Overview
The GL25N40A8 is a high-performance Silicon N-Channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This advanced design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy capabilities, making it ideal for various power switching circuits that require system miniaturization and higher efficiency. The device is supplied in a RoHS-compliant TO-220 package.
Key Features:
- Fast Switching
- Low ON Resistance (Rdson 0.155)
- Low Gate Charge (Typical 60nC)
- Low Reverse Transfer Capacitances (Typical 25pF)
- 100% Single Pulse Avalanche Energy Tested
Applications:
- Power switch circuits for adaptors and chargers.
Product Attributes
- Brand: GL
- Technology: Silicon N-Channel Enhanced VDMOSFET
- Package: TO-220
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 400 | V | |
| ID | Continuous Drain Current | 25 | A | |
| ID | Continuous Drain Current | TC=100 C | 17.5 | A |
| IDMa1 | Pulsed Drain Current | 100 | A | |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAsa2 | Single Pulse Avalanche Energy | 1850 | mJ | |
| EAra1 | Avalanche Energy, Repetitive | 155 | mJ | |
| IAR a1 | Avalanche Current | 25 | A | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 250 | W | |
| Derating Factor above 25C | 2.0 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 0.5 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | / W | |
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 400 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.53 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=400V, VGS=0V,Ta=25 | -- | 1.0 A |
| VDS=320V, VGS=0V,Ta=125 | -- | 100 A | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | 100 nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -100 nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=12.5A | 0.13 | |
| 0.155 | ||||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 | V |
| 4.0 | V | |||
| gfs | Forward Transconductance | VDS=15V,ID=12.5A | 16 | S |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 2650 | pF |
| Coss | Output Capacitance | 320 | pF | |
| Crss | Reverse Transfer Capacitance | 25 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=25A,VDD=200V VGS=10V,Rg=25 | 35 | ns |
| tr | Rise Time | 71 | ns | |
| td(OFF) | Turn-Off Delay Time | 160 | ns | |
| tf | Fall Time | 72 | ns | |
| Qg | Total Gate Charge | ID=25A,VDD=200V VGS=10V | 60 | nC |
| Qgs | Gate to Source Charge | 12 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 19 | nC | |
| Source-Drain Diode Characteristics | ||||
| ISD | Continuous Source Current (Body Diode) | 25 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 100 | A | |
| VSD | Diode Forward Voltage | IS=25A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=25A,Tj=25 dIF/dt=100A/s,VGS=0V | 303 | ns |
| Qrr | Reverse Recovery Charge | 1867 | C | |
2410121714_GL-GL25N40A8_C2988053.pdf
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