GOODWORK MMBT8050D 1.5A transistor designed for operation in general purpose electronic applications
Key Attributes
Model Number:
MMBT8050D(1.5A)
Product Custom Attributes
Mfr. Part #:
MMBT8050D(1.5A)
Package:
SOT-23
Product Description
MMBT8050D NPN Transistor
The MMBT8050D is an NPN transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits.
Product Attributes
- Marking Type: MMBT8050D
- Marking Code: Y1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Collector Cut-off Current | ICBO | VCB = 40V, IE = 0 | 0.1 | uA | ||
| Emitter Cut-off Current | IEBO | VEB = 5V, IC = 0 | 0.1 | uA | ||
| DC Current Gain | hFE1 | VCE = 1V, IC = 100mA | 120 | 400 | ||
| DC Current Gain | hFE2 | IC = 800mA, IB = 80mA | 400 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 800mA, IB = 80mA | 0.5 | 1.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 800mA, IB = 80mA | 1.0 | V | ||
| Transition Frequency | fT | VCE = 10V, IC = 50mA | 40 | MHz | ||
| Collector Cut-off Current | ICEO | VCE = 20V, IE = 0 | 0.1 | uA | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 100uA, IE = 0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 0.1 mA, IB = 0 | 25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 100uA, IC = 0 | 5 | V | ||
| Thermal Resistance From Junction To Ambient | RthJA | 417 | /W |
2512301500_GOODWORK-MMBT8050D-1-5A_C53260779.pdf
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