Medium Power Amplification and Switching Transistor GOODWORK MMST5551 NPN Plastic Encapsulated Device

Key Attributes
Model Number: MMST5551
Product Custom Attributes
Mfr. Part #:
MMST5551
Package:
SOT-323
Product Description

Product Overview

The MMST5551 is an NPN Silicon Plastic-Encapsulated Transistor ideal for medium power amplification and switching applications. It is also available in a lead-free version and is complementary to the MMBT5401W. The device is marked with 'K4N'.

Product Attributes

  • Type: NPN Silicon Plastic-Encapsulated Transistor
  • Complementary to: MMBT5401W
  • Marking: K4N
  • Available in Lead Free Version: Yes

Technical Specifications

ParameterSymbolRatingUnitTest Condition
Collector to Base VoltageVCBO180V
Collector to Emitter VoltageVCEO160V
Emitter to Base VoltageVEBO6V
Collector Current-ContinuousIC200mA
Collector Power DissipationPC200mWTA = 25C
Thermal Resistance, Junction to AmbientRJA625C/W
Operating & Storage TemperatureTJ, TSTG150, -55 ~ 150C
Collector-Base Breakdown VoltageV(BR)CBO180VIC=100A, IE=0
Collector-Emitter Breakdown VoltageV(BR)CEO160VIC = 1mA, IB = 0
Emitter-Base Breakdown VoltageV(BR)EBO6VIE=10A, IC=0
Collector Cutoff CurrentICBO50nAVCB=120V, IE=0
Emitter Cutoff CurrentIEBO50nAVEB=4V, IC=0
DC Current GainhFE180VCE=5V, IC=1mA
hFE280-250VCE=5V, IC=10mA
hFE330VCE=5V, IC=50mA
Collector-Emitter Saturation VoltageVCE(sat)0.15VIC=10mA, IB=1mA
VCE(sat)0.2VIC=50mA, IB=5mA
Base-Emitter VoltageVBE(sat)1VIC=10mA, IB=1mA
VBE(sat)1VIC=50mA, IB=5mA
Transition FrequencyfT100-300MHzVCE=10V, IC=10mA, f=100MHz
Collector Output CapacitanceCob6pFVCB=10V, IE=0, f=1MHz
Noise FigureNF8dBVCE=5V, IC=0.2mA, f=1KHz, RS=1K

2510101615_GOODWORK-MMST5551_C52037863.pdf

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