3 Quadrants TRIACs 16 Amp Current 600 Volt Voltage FUXINSEMI BTB16-600BW for Solid State Relay and Appliance
Key Attributes
Model Number:
BTB16-600BW
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
160A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB16-600BW
Package:
TO-220B
Product Description
BTB16 Series 16A 3 Quadrants TRIACs
The BTB16 Series TRIACs are high-performance components designed for applications requiring robust current handling and excellent commutation. With their ability to withstand shock loading and their suitability for inductive loads, these 3-quadrant TRIACs are ideal for motor speed regulation, solid-state relays, and various household appliances such as washing machines and vacuum cleaners.
Product Attributes
- Brand: Fuxin Semiconductor (FS)
- Package: TO-220B
- Origin: China (implied by website and manufacturer)
Technical Specifications
| Symbol | Parameter | Value | Unit | Notes |
| IT(RMS) | RMS on-state current | 16 | A | |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | 600 / 800 | V | |
| VTM | Forward "on" voltage | ≤1.55 | V | ITM = 23A, tp=380µs |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 160 | A | |
| I2t | I2t value for fusing (tp=10ms) | 140 | A²s | |
| dIT/dt | Critical rate of rise of on-state current (IG =2×IGT) | 100 | A/µs | Quadrant -- |
| IGM | Peak gate current | 4 | A | |
| PG(AV) | Average gate power dissipation | 1 | W | |
| TJ | Junction Temperature | -40 ~ +125 | °C | |
| TSTG | Storage Temperature | -40 ~ +150 | °C | |
| IGT | Gate trigger current | ≤35 / ≤50 | mA | VD =12V, RL = 33Ω, Tj =25°C (Quadrants --) |
| VGT | Gate trigger voltage | ≤1.3 | V | Quadrants -- |
| VGD | Gate non-trigger voltage | ≥0.2 | V | VD =VDRM, Tj =125°C |
| IL | latching current | ≤50 / ≤70 (-), ≤60 / ≤80 () | mA | IG =1.2IGT |
| IH | Holding current | ≤30 / ≤50 | mA | IT =500mA |
| dVD/dt | Critical-rate of rise of commutation voltage | ≥500 / ≥1000 | V/µs | VD=2/3VDRM, Gate Open, Tj =125°C |
| IDRM | Repetitive Peak Off-State Current | ≤5 | µA | VD =VDRM, Tj=25°C |
| IRRM | Repetitive Peak Reverse Current | ≤1 | mA | VR =VRRM, Tj=125°C |
| Rth(j-c) | Junction to case (AC) Thermal resistance | 1.2 | °C/W | |
| Rth(j-a) | Junction to ambient Thermal resistance | 60 | °C/W |
2409272301_FUXINSEMI-BTB16-600BW_C784604.pdf
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