High voltage switching transistor GOODWORK 13009 suitable for electronic circuit applications

Key Attributes
Model Number: 13009
Product Custom Attributes
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
80W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
12A
Collector - Emitter Voltage VCEO:
410V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
13009
Package:
TO-220AB
Product Description

Product Overview

The 13009 is a high voltage, high speed switching NPN transistor designed for high reliability applications. It offers excellent performance in switching circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-base breakdown voltageBVCBOIC = 1mAIE = 0700V
Collector-emitter breakdown voltageBVCEOIC = 5mAIB = 0410520V
Emitter-base breakdown voltageBVEBOIE =0.1mAIC = 09V
Collector cut-off currentICBOVCB = 700VIE = 01mA
Emitter cut-off currentIEBOVEB = 9VIC = 01mA
DC current gainhFE(1)VCE= 5VIC= 3A1035
DC current gainhFE(2)VCE= 5VIC=2mA10
Collector-emitter saturation voltageVCE(sat)IC = 5AIB = 1A1.0V
Collector-emitter saturation voltageVCE(sat)IC = 8AIB = 1.6A1.5V
Collector-emitter saturation voltageVCE(sat)IC = 12AIB = 3A3V
Base-emitter on voltageVBE(sat)IC = 5AIB = 1A1.2V
Base-emitter on voltageVBE(sat)IC = 8AIB = 1.6A1.6V
Transition frequencyfTIC= 0.5A, VCE=10V4MHz
Output CapacitanceCobVCB = 10V,IE = 0 f=0.1MHz180pF
Delay TimetdVC = 125V, IC= 8A, IB1= IB2 = 1.6A tp= 25s, Duty 1%0.1s
Rise Timetr1s
Fall Timetf0.7s
Switching TimetsIC= 500mA0.7s
Thermal Resistance Junction to AmbientJA54/W
Thermal Resistance Junction to CaseJC4/W

2408021728_GOODWORK-13009_C17702907.pdf

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