NPN transistor GOODWORK MMBT3904T in small package offering high collector current and voltage ratings
Key Attributes
Model Number:
MMBT3904T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904T
Package:
SOT-523
Product Description
Product Overview
The MMBT3904T is an NPN transistor designed for general-purpose applications. It offers complementary functionality to the MMBT3906T and comes in a small SOT-523 package, making it suitable for space-constrained designs. This transistor is characterized by its robust maximum ratings and detailed electrical characteristics, including breakdown voltages, current gain, saturation voltages, and switching parameters.
Product Attributes
- Complementary to MMBT3906T
- Small Package
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | |
| VCBO | Collector-Base Voltage | 60 | V | ||
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Collector Current | 200 | mA | ||
| PC | Collector Power Dissipation | 150 | mW | (Ta=25 unless otherwise noted) | |
| RJA | Thermal Resistance From Junction To Ambient | 833 | /W | ||
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55+150 | |||
| V(BR)CBO | Collector-base breakdown voltage | 60 | V | IC=10A, I E=0 | |
| V(BR)CEO | Collector-emitter breakdown voltage | 40 | V | IC=1mA, IB=0 | |
| V(BR)EBO | Emitter-base breakdown voltage | 6 | V | IE=10A, IC=0 | |
| ICEX | Collector cut-off current | 50 | nA | VCE=30V, VEB(off)=3V | |
| IEBO | Emitter cut-off current | 100 | nA | VEB=5V, IC=0 | |
| hFE(1) | DC current gain | 70 | VCE=1V, IC=1mA | ||
| hFE(2) | DC current gain | 100 | 300 | VCE=1V, IC=10mA | |
| hFE(3) | DC current gain | 60 | VCE=1V, IC=50mA | ||
| VCE(sat) | Collector-emitter saturation voltage | 0.2 | V | IC=10mA, IB=1mA | |
| VCE(sat) | Collector-emitter saturation voltage | 0.3 | V | IC=50mA, IB=5mA | |
| VBE(sat) | Collector-emitter saturation voltage | 0.65 | 0.85 | V | IC=10mA, IB=1mA |
| VBE(sat) | Collector-emitter saturation voltage | 0.95 | V | IC=50mA, IB=5mA | |
| fT | Transition frequency | 300 | MHz | VCE=20V,IC=10mA, f=100MHz | |
| Cob | Collector output capacitance | 4 | pF | VCB=5V, IE=0, f=1MHz | |
| Cib | Base input capacitance | 8 | pF | VEB=0.5V, IC=0, f=1MHz | |
| td | Delay time | 35 | ns | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | |
| tr | Rise time | 35 | ns | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | |
| ts | Storage time | 200 | ns | VCC=3V, IC=10mA, IB1= IB2=1mA | |
| tf | Fall time | 50 | ns | VCC=3V, IC=10mA, IB1= IB2=1mA |
2409291934_GOODWORK-MMBT3904T_C28310448.pdf
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