P Channel MOSFET GL GL12P40A4 Featuring TO 252 Package and RoHS Compliance for High Frequency Circuits
Key Attributes
Model Number:
GL12P40A4
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V,8A
Reverse Transfer Capacitance (Crss@Vds):
65pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
530pF@20V
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
GL12P40A4
Package:
TO-252
Product Description
Product Overview
The GL12P40A4 is a P-Channel Power MOSFET from GL Silicon, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. The product conforms to RoHS standards and is supplied in a TO-252 package.
Product Attributes
- Brand: GL Silicon
- Package Type: TO-252
- RoHS Compliant: Yes
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | -40 | V | |
| ID | Continuous Drain Current | -12 | A | |
| ID | Continuous Drain Current TC = 70 C | -9.6 | A | |
| IDMa1 | Pulsed Drain Current | -48 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| Eas a5 | L=0.5mH | 90 | mJ | |
| dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 45 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | -40 | V |
| IDSS | Drain to Source Leakage Current | VDS=-40V, VGS= 0V,Ta=25 | 1.0 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | 0.1 | A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -0.1 | A |
| ON Characteristics | ||||
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=-10V,ID=-8A | 26 (Typ) | m |
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=-10V,ID=-8A | 35 (Max) | m |
| RDS(ON)2 | Drain-to-Source On-Resistance | VGS=-4.5V,ID=-4A | 34 (Typ) | m |
| RDS(ON)2 | Drain-to-Source On-Resistance | VGS=-4.5V,ID=-4A | 45 (Max) | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | -1 (Typ) | V |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | -3.0 (Max) | V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=-15V,ID=-8A | 20 | S |
| Ciss | Input Capacitance | VGS=0V,VDS=-20V f=1.0MHz | 530 | pF |
| Coss | Output Capacitance | 100 | pF | |
| Crss | Reverse Transfer Capacitance | 65 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | VDD=-20V,ID=-12A VGS=-10V,RG=3 | 8.8 | ns |
| tr | Rise Time | 6.5 | ns | |
| td(OFF) | Turn-Off Delay Time | 20 | ns | |
| tf | Fall Time | 8 | ns | |
| Qg | Total Gate Charge | VDD=-20V, ID=-12A VGS=-10V | 15 | nC |
| Qgs | Gate to Source Charge | 4.5 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 3.5 | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -12 | A | |
| VSD | Diode Forward Voltage | IS=-12A,VGS=0V | -1.5 | V |
| trr | Reverse Recovery Time | IS=-12A,Tj = 25 dIF/dt=100A/us,VGS=0V | 45 | ns |
| Qrr | Reverse Recovery Charge | 40 | nC | |
| Thermal Characteristics | ||||
| RJC | Junction-to-Case | 2.5 | /W | |
2410121608_GL-GL12P40A4_C5138968.pdf
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