general purpose NPN transistor for switching and amplification GOODWORK MMBT3904 providing stable circuit operation
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
MMBT3904 NPN TRANSISTOR
The MMBT3904 is an NPN transistor designed for general-purpose applications. It offers complementary functionality to the MMBT3906, providing flexibility in circuit design. This transistor is suitable for various switching and amplification tasks.
Product Attributes
- Marking Type number: MMBT3904
- Marking code: 1AM
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | CollectorBase Voltage | 60 | V | |||
| VCEO | CollectorEmitter Voltage | 40 | V | |||
| VEBO | EmitterBase Voltage | 6 | V | |||
| IC | Collector Current Continuous | 200 | mA | |||
| PC | Collector Power Dissipation | (Ta=25) | 200 | mW | ||
| RthJA | Thermal Resistance From Junction To Ambient | 625 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC = 10uA, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 10uA, IC = 0 | 6 | V | ||
| ICEX | Collector cut-off current | VCB = 60V, IE = 0 | 100 | nA | ||
| hFE1 | DC current gain | VCE = 30V, VEB(off) =3V | 100 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.95 | V | ||
| fT | Transition frequency | VCE = 1V, IC = 100mA | 300 | MHz | ||
| ICBO | Collector cut-off current | VCB = 60V, IE = 0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC =0 | 100 | nA | ||
| hFE2 | DC current gain | VCE = 1V, IC=10mA | 100 | 300 | ||
| hFE3 | DC current gain | VCE = 1V, IC=10mA | 100 | 300 | ||
| td | Delay time | VCC = 3V, IC = 10mA | 35 | ns | ||
| tr | Rise time | IB1=1mA IB2= 60mA | 35 | ns | ||
| ts | Storage time | IC = 50mA, IB = 5mA | 200 | ns | ||
| tf | Fall time | VCE = 20V, IC = 10mA, f=100MHz | 50 | ns |
hFE Classification
| Rank | Range |
| L | 100-200 |
| H | 200-300 |
| HFE | 100-300 |
2410010232_GOODWORK-MMBT3904_C909754.pdf
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