Power Switching N Channel MOSFET GL GL80N06FA9 Featuring Low Gate Charge and TO 220F Package
Key Attributes
Model Number:
GL80N06FA9
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
4nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
GL80N06FA9
Package:
TO-220F-3
Product Description
Product Overview
The GL80N06FA9 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD. Utilizing advanced trench technology and design, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The TO-220F package ensures good heat dissipation and complies with RoHS standards.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N-Channel
- Package Type: TO-220F
- RoHS Compliant: Yes
Technical Specifications
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| General Description | ||||||
| RDS(ON) | VGS=10V | <8.0 | m | 6.5 | ||
| Continuous Drain Current (ID) | (Tc= 25) | 80 | A | |||
| Power Dissipation (PD) | (Tc= 25) | 60 | W | |||
| Single Pulse Avalanche Energy (EAS) | (Tj=25, VDD=20V, VG=10V, L=0.5mH, Rg=25) | 390 | mJ | |||
| Operating Junction and Storage Temperature Range | -55 to 175 | |||||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 60 | V | 60 | -- | -- |
| Drain to Source Leakage Current (IDSS) | VDS=60V, VGS=0V, Ta=25 | 1.0 | A | -- | -- | 1.0 |
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | 0.1 | A | -- | -- | 0.1 |
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | -0.1 | A | -- | -- | -0.1 |
| ON Characteristics | ||||||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V, ID=40A | 8.0 | m | -- | 6.5 | 8.0 |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS, ID=250A | 2.5 | V | 1.0 | -- | 2.5 |
| Dynamic Characteristics | ||||||
| Forward Transconductance (gfs) | VDS=5V, ID=20A | 20 | S | -- | 20 | -- |
| Input Capacitance (Ciss) | VGS=0V, VDS=30V, f=1.0MHz | 4000 | pF | -- | 4000 | -- |
| Output Capacitance (Coss) | VGS=0V, VDS=30V, f=1.0MHz | 290 | pF | -- | 290 | -- |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=30V, f=1.0MHz | 210 | pF | -- | 210 | -- |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time (td(ON)) | VDD=30V, RL=1, VGS=10V, RG=3 | 8.5 | ns | -- | 8.5 | -- |
| Rise Time (tr) | VDD=30V, RL=1, VGS=10V, RG=3 | 7 | ns | -- | 7 | -- |
| Turn-Off Delay Time (td(OFF)) | VDD=30V, RL=1, VGS=10V, RG=3 | 40 | ns | -- | 40 | -- |
| Fall Time (tf) | VDD=30V, RL=1, VGS=10V, RG=3 | 15 | ns | -- | 15 | -- |
| Total Gate Charge (Qg) | VDD=30V, ID=20A, VGS=10V | 90 | nC | -- | 90 | -- |
| Gate to Source Charge (Qgs) | VDD=30V, ID=20A, VGS=10V | 9 | nC | -- | 9 | -- |
| Gate to Drain (Miller)Charge (Qgd) | VDD=30V, ID=20A, VGS=10V | 18 | nC | -- | 18 | -- |
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (IS) (Body Diode) | 80 | A | -- | -- | 80 | |
| Diode Forward Voltage (VSD) | IS=80A, VGS=0V | 1.5 | V | -- | -- | 1.5 |
| Thermal Characteristics | ||||||
| Junction-to-Case (RJC) | Surface Mounted on FR4 Board, t10sec | 2.08 | /W | 2.08 | ||
2411220215_GL-GL80N06FA9_C2886426.pdf
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