Power Switching N Channel MOSFET GL GL20N02-8 with Ultra Low RDS ON and RoHS Compliant SOP 8 Package
Key Attributes
Model Number:
GL20N02-8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
20A
RDS(on):
5mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Output Capacitance(Coss):
500pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
GL20N02-8
Package:
SOP-8
Product Description
Product Overview
The GL20N02-8 is an N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features a high-density cell design for ultra-low Rdson and is fully characterized for avalanche voltage and current. Its SOP-8 package is RoHS compliant and offers good heat dissipation, making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: SOP-8
- Certification: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 20 | V | |
| ID | Continuous Drain Current | 20 | A | |
| IDM | Pulsed Drain Current | 60 | A | |
| VGS | Gate-to-Source Voltage | 12 | V | |
| PD | Power Dissipation | 3 | W | |
| EAS | Single pulse avalanche energya5 | 200 | mJ | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 20 | V |
| IDSS | Drain to Source Leakage Current | VDS=20V, VGS= 0V,Ta = 25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+12V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-12V | -- | -0.1 A |
| ON Characteristicsa3 | ||||
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=10V,ID=10A | -- | 5.0 m |
| RDS(ON)2 | Drain-to-Source On-Resistance | VGS=4.5V,ID=10A | -- | 5.5 m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 0.5 | 1.2 V |
| Dynamic Characteristicsa4 | ||||
| gfs | Forward Transconductance | VDS=5V,ID=10A | 15 | S |
| Ciss | Input Capacitance | VGS=0V,VDS=10V f=1.0MHz | -- | 2000 pF |
| Coss | Output Capacitance | -- | 500 pF | |
| Crss | Reverse Transfer Capacitance | -- | 210 pF | |
| Resistive Switching Characteristicsa4 | ||||
| td(ON) | Turn-on Delay Time | VDD=10V,ID=25A VGS=5V,RG=1.8 | -- | 7 ns |
| tr | Rise Time | -- | 18 ns | |
| td(OFF) | Turn-Off Delay Time | -- | 30 ns | |
| tf | Fall Time | -- | 17 ns | |
| Qg | Total Gate Charge | VDD=10V, ID=25A VGS=10V | -- | 28 nC |
| Qgs | Gate to Source Charge | -- | 7 nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 6.8 nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current a2(Body Diode) | -- | 20 A | |
| VSD | Diode Forward Voltagea3 | IS=20A,VGS=0V | -- | 1.2 V |
| Thermal Characteristics | ||||
| RJA | Junction-to-Ambient | 42 | /W | |
a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t10sec.
a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
a4: Guaranteed by design, not subject to production.
a5: EAS conditionTj=25,VDD=15V,VGS=10V,L=1.0mH,Rg=25
2411220136_GL-GL20N02-8_C2886407.pdf
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