Compact medium power PNP transistor GOODWORK MMBT5401 designed for switching and amplification tasks

Key Attributes
Model Number: MMBT5401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description

MMBT5401 PNP TRANSISTOR

Complementary to MMBT5551, the MMBT5401 PNP transistor is ideal for medium power amplification and switching applications.

Product Attributes

  • Brand: DEMACH
  • Type: MMBT5401
  • Package: SOT-23

Technical Specifications

SymbolParameterMinMaxUnitTest Conditions
VCBOCollectorBase Voltage-160V
VCEOCollectorEmitter Voltage-150V
VEBOEmitterBase Voltage-5V
ICCollector Current Continuous-0.6A
PCCollector Dissipation0.3W(Ta=25)
RthJAThermal Resistance From Junction To Ambient416/W
TJ,TstgOperation Junction and Storage Temperature Range-55+150
V(BR)CBOCollector-base breakdown voltage-160VIC =-100uA, IE = 0
V(BR)CEOCollector-emitter breakdown voltage-150VIC =-1 mA, IB = 0
V(BR)EBOEmitter-base breakdown voltage-5VIE =-10uA, IC = 0
ICBOCollector cut-off current-0.1uAVCB =-120V, IE = 0
IEBOEmitter cut-off current-0.1uAVEB =-4V, IC = 0
hFE1DC current gain80VC =-25V, IC =-10mA
hFE2DC current gain100IC =-50mA, IB =-5mA
hFE3DC current gain50IC =-10mA, IB =-1mA
VCE(sat)1Collector-emitter saturation voltage-0.5VIC =-10mA, IB =-1mA
VCE(sat)2Collector-emitter saturation voltage-1VIC =-50mA, IB =-5mA
VBE(sat)1Base-emitter saturation voltage-1.2VIC =-10mA, IB =-1mA
VBE(sat)2Base-emitter saturation voltage-1VIC =-50mA, IB =-5mA
fTTransition frequency300MHZVCE =-5V, IC =-10mA, f=30MHz

2410010232_GOODWORK-MMBT5401_C909757.pdf

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