Compact SOT23 NPN Bipolar Junction Transistor GOODWORK S8050 for General Purpose Electronic Circuits
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
Product Overview
The S8050 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a complimentary pairing with the S8550 transistor and is housed in the compact SOT-23 package, making it suitable for space-constrained designs. This transistor is characterized by its DC current gain (hFE) and transition frequency (fT), making it a versatile component for various electronic circuits.
Product Attributes
- Marking Type: S8050
- Marking Code: J3Y
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Breakdown Voltage | V(BR)CBO | IC = 100uA, IE = 0 | 40 | V | ||
| V(BR)CEO | IC = 1 mA, IB = 0 | 25 | V | |||
| V(BR)EBO | IE = 100uA, IC = 0 | 5 | V | |||
| Cut-off Current | ICBO | VCB = 40V, IE = 0 | 0.1 | uA | ||
| IEBO | VEB = 5V, IC = 0 | 0.1 | uA | |||
| DC Current Gain | hFE1 | VCE = 1V, IC = 50mA | 120 | 400 | ||
| hFE2 | VCE = 6V, IC = 20mA, f=30MHz | 150 | ||||
| Saturation Voltage | VBE(sat) | VCE = 1V, IC = 500mA | 0.6 | 1.2 | V | |
| VCE(sat) | IC = 500mA, IB = 50mA | 0.1 | V | |||
| Transition Frequency | fT | VCE = 6V, IC = 20mA, f=30MHz | 50 | MHz |
2410010232_GOODWORK-S8050_C909746.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
