Power Amplifier Switching Circuit PNP Transistor Featuring Goodwork MJD45H11 Low Saturation Voltage
Key Attributes
Model Number:
MJD45H11
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
20W
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
MJD45H11
Package:
TO-252
Product Description
Product Overview
The MJD45H11 is a PNP transistor in a TO-252 package, designed for applications such as power amplifiers and switching circuits. It features a low collector-emitter saturation voltage and fast switching speed. This transistor is complementary to the MJD44H11.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Parameter | Symbol | Conditions | Value | Unit |
| MJD45H11 (PNP) | Collector-base breakdown voltage | BVCBO | IC = -100AIE = 0 | -100 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = - 10mAIB = 0 | -80 | V | |
| Emitter-base breakdown voltage | BVEBO | IE = -100AIC = 0 | -5 | V | |
| Collector cut-off current | ICBO | VCB = -80V VBE = 0 | -10 | A | |
| Emitter cut-off current | IEBO | VEB = -5VIC = 0 | -50 | A | |
| DC current gain | hFE | 60 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = -8AIB =-0.4A | -1 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC = -8A IB = -0.8A | -1.5 | V | |
| Transition frequency | fT | VCE = -10V IB = -0.5A | 50 | MHz | |
| Output Capacitance | Cob | VCB = 10V,IE =0, f=1MHz | 130 | pF |
2504251720_GOODWORK-MJD45H11_C48580717.pdf
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