PNP Epitaxial Planar Die Construction Transistor GOODWORK MMBT3906T Suitable for Various Applications
Key Attributes
Model Number:
MMBT3906T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3906T
Package:
SOT-523
Product Description
Product Overview
The MMBT3906T is a PNP Epitaxial Planar Die Construction transistor, offering complementary NPN type availability. It is also available in a lead-free version. This transistor is designed for various applications requiring reliable performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Epitaxial Planar Die Construction
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC=-10A,IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA,IB=0 | -40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A,IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-30V,IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=-5V,IC=0 | -0.1 | A | ||
| hFE | DC current gain | VCE=-1V,IC=-0.1mA | 60 | |||
| VCE=-1V,IC=-1mA | 80 | |||||
| VCE=-1V,IC=-10mA | 100 | 300 | ||||
| VCE=-1V,IC=-50mA | 60 | |||||
| VCE=-1V,IC=-100mA | 30 | |||||
| VCE(sat) | Collector-emitter saturation voltage | IC=-10mA,IB=-1mA | -0.25 | V | ||
| IC=-50mA,IB=-5mA | -0.4 | V | ||||
| VBE(sat) | Base-emitter saturation voltage | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| IC=-50mA,IB=-5mA | -0.95 | V | ||||
| fT | Transition frequency | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Cobo | Collector output capacitance | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Ciob | Input capacitance | VEB=-0.5V,IE=0,f=1MHz | 10 | pF | ||
| NF | Noise figure | VCE=-5V,Ic=0.1mA, f | 4 | dB | ||
| td | Delay time | VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA | 35 | ns | ||
| tr | Rise time | 35 | ns | |||
| tS | Storage time | VCC=-3V, IC=-10mA IB1= IB2=-1mA | 225 | ns | ||
| tf | Fall time | VCC=-3V, IC=-10mA IB1= IB2=-1mA | 75 | ns |
2410121513_GOODWORK-MMBT3906T_C22466881.pdf
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