High Voltage NPN Transistor with 350V Collector Emitter Voltage GOODWORK MMBT6517 in SOT23 Package
Key Attributes
Model Number:
MMBT6517
Product Custom Attributes
Mfr. Part #:
MMBT6517
Package:
SOT-23
Product Description
Product Overview
High Voltage Transistor, NPN Plastic-Encapsulate Transistors in SOT-23 package. Features include a high Collector-Emitter Voltage of 350V and a maximum Collector Dissipation of 250mW. Suitable for various electronic applications requiring high voltage switching.
Product Attributes
- Brand: DEMACHEL
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| MMBT6520 / MMBT6517 | VCEO | 350 | V | |||
| PC (max) | 250 | mW | ||||
| IC | 500 | mA | ||||
| Absolute Maximum Ratings | BVCBO | 350 | V | |||
| BVCEO | 350 | V | ||||
| BVEBO | 6 | V | ||||
| Tj | 150 | |||||
| Electrical Characteristics | BVCBO | IC = 100A, IE = 0 | 350 | V | ||
| BVCEO | IC = 1mA, IB = 0 | 350 | V | |||
| Emitter-base breakdown voltage | BVEBO | IE = 100A, IC = 0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB = 250V, IE = 0 | 50 | nA | ||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 50 | nA | ||
| DC current gain | hFE | VCE = 10V, IB= 10mA | 30 | 200 | ||
| VCE = 10V, IB= 30mA | 30 | 200 | ||||
| VCE = 10V, IB= 50mA | 20 | |||||
| VCE = 10V, IB= 100mA | 10 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC = 10mA, IB = 1mA | 0.3 | V | ||
| IC = 30mA, IB = 3mA | 0.5 | V | ||||
| IC = 50mA, IB = 5mA | 1 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC = 10mA, IB = 1mA | 0.75 | V | ||
| IC = 30mA, IB = 3mA | 0.9 | V | ||||
| Base-emitter on Voltage | VBE(on) | VCE = 10V, IC= 100mA | 2 | V | ||
| Transition frequency | fT | VCE = 20V, IB = 10mA | 40 | 200 | MHZ | |
| Output capacitance | Cob | VCE = 20V, IE =0, f=1MHz | 6 | pF |
2510101615_GOODWORK-MMBT6517_C52037868.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
