Surface mount PNP transistor MMBTA56 featuring epitaxial planar die for amplification and switching

Key Attributes
Model Number: MMBTA56
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA56
Package:
SOT-23
Product Description

Product Overview

The MMBTA55 / MMBTA56 are PNP small signal surface mount transistors featuring epitaxial planar die construction. They are ideal for low power amplification and switching applications. Complementary NPN types (MMBTA05 / MMBTA06) are also available.

Product Attributes

  • Brand: DEMAC
  • Package Type: SOT-23

Technical Specifications

CharacteristicSymbolMMBTA55 (Min)MMBTA55 (Max)MMBTA56 (Min)MMBTA56 (Max)UnitTest Condition
Collector-Base Breakdown VoltageV(BR)CBO-60-80VIC = -100A, IE = 0
Collector-Emitter Breakdown VoltageV(BR)CEO-60-80VIC = -1.0mA, IB = 0
Emitter-Base Breakdown VoltageV(BR)EBO-4.0-4.0VIE = -100A, IC = 0
Collector Cutoff CurrentICBO-100-100nAVCB = -60V, IE = 0 (MMBTA55); VCB = -80V, IE = 0 (MMBTA56)
Collector Cutoff CurrentICEX-100-100nAVCE = -60V, IBO = 0V (MMBTA55); VCE = -80V, IBO = 0V (MMBTA56)
DC Current GainhFE100100IC = -10mA, VCE = -1.0V
DC Current GainhFEIC = -100mA, VCE = -1.0V
Collector-Emitter Saturation VoltageVCE(SAT)-0.25-0.25VIC = -100mA, IB = -10mA
Base-Emitter Saturation VoltageVBE(SAT)-1.2-1.2VIC = -100mA, VCE = -1.0V
Current Gain-Bandwidth ProductfT5050MHzVCE = -1.0V, IC = -100mA, f = 100MHz
Collector Current - ContinuousIC-500-500mA@TA = 25C
Power DissipationPd300300mW@TA = 25C
Thermal Resistance, Junction to AmbientRJA417417C/W
Operating and Storage Temperature RangeTj, TSTG-55+150-55+150C

2504101957_GOODWORK-MMBTA56_C22470867.pdf

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