High cell density trench MOSFET GOODWORK 50N03 designed for operation in synchronous buck converters
Key Attributes
Model Number:
50N03
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 N-channel
Output Capacitance(Coss):
175pF
Input Capacitance(Ciss):
1.14nF
Pd - Power Dissipation:
32.5W
Gate Charge(Qg):
13.3nC@10V
Mfr. Part #:
50N03
Package:
TO-252
Product Description
Product Overview
The 50N03 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved.
Product Attributes
- Green Device Available
- 100% EAS Guaranteed
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 10s Steady State | - | - | 30 | V |
| VGS | Gate-Source Voltage | - | - | 20 | V | |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | - | - | 50 | A | |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | - | - | 33 | A | |
| IDM | Pulsed Drain Current | - | - | 198 | A | |
| EAS | Single Pulse Avalanche Energy | - | - | 36 | mJ | |
| IAS | Avalanche Current | - | - | 53.8 | A | |
| PD@TC=25 | Total Power Dissipation | - | - | 32.5 | W | |
| TSTG | Storage Temperature Range | - | -55 | 175 | ||
| TJ | Operating Junction Temperature Range | - | -55 | 175 | ||
| RJC | Thermal Resistance Junction-Case | 1 | - | - | 3.56 | /W |
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | - | - | 100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=25A | - | 6.5 | 7.5 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=15A | - | 10 | 14 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 1140 | - | pF |
| Coss | Output Capacitance | - | - | 175 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 151 | - | pF |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VDS=15V, ID=25A, VGS=10V | - | 13.3 | - | nC |
| Qgs | Gate-Source Charge | - | - | 3.1 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | - | - | 5 | - | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDS=15V, ID=25A, RGEN=3, VGS=10V | - | 15 | - | ns |
| tr | Turn-on Rise Time | - | - | 19 | - | ns |
| td(off) | Turn-off Delay Time | - | - | 35 | - | ns |
| tf | Turn-off Fall Time | - | - | 21 | - | ns |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | - | 50 | A |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | - | 200 | A |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=30A,dI/dt=100A/s | - | 25 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | - | 26 | - | nC |
2410010333_GOODWORK-50N03_C21713997.pdf
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