Power switching device GOODWORK SI2312A trench N channel MOSFET with RoHS compliance and reliability
Key Attributes
Model Number:
SI2312A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
12mΩ@4.5V,6A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
114pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
700pF@10V
Pd - Power Dissipation:
2W
Mfr. Part #:
SI2312A
Package:
SOT-23
Product Description
Product Overview
The SI2312A is a high-cell density trench N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full reliability.
Product Attributes
- Brand: GK-Goodwork
- Certifications: RoHS, Green Device Available
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current, VGS @ 4.5V (TA=25) | ID@TA=25 | VGS @ 4.5V | 7.0 | A | ||
| Continuous Drain Current, VGS @ 4.5V (TA=70) | ID@TA=70 | VGS @ 4.5V | 5.0 | A | ||
| Pulsed Drain Current | IDM | 32 | A | |||
| Total Power Dissipation (TA=25) | PD@TA=25 | 2 | W | |||
| Total Power Dissipation (TA=70) | PD@TA=70 | 0.66 | W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance Junction-ambient | RJA | 120 | /W | |||
| Electrical Characteristics (TJ =25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | - | - | 1.0 | μA |
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS =±12V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 0.5 | 0.75 | 1.2 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=6A | - | 12 | 15 | Ω |
| Static Drain-Source on-Resistance | RDS(on) | VGS=2.5V, ID=5A | - | 16 | 22.5 | Ω |
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1.0MHz | - | 700 | - | pF |
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1.0MHz | - | 132 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1.0MHz | - | 114 | - | pF |
| Total Gate Charge | Qg | VDS=10V, ID=4A, VGS=4.5V | - | 15 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V, ID=4A, VGS=4.5V | - | 2 | - | nC |
| Gate-Drain(Miller) Charge | Qgd | VDS=10V, ID=4A, VGS=4.5V | - | 5.2 | - | nC |
| Turn-on Delay Time | td(on) | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | - | 9 | - | ns |
| Turn-on Rise Time | tr | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | - | 25 | - | ns |
| Turn-off Delay Time | td(off) | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | - | 37 | - | ns |
| Turn-off Fall Time | tf | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | - | 14 | - | ns |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 8 | A | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 32 | A | |||
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=8A | - | - | 1.2 | V |
2504251720_GOODWORK-SI2312A_C48580925.pdf
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