Power MOSFET load switch and PWM component GOODWORK 30N10 featuring low RDS ON resistance
Key Attributes
Model Number:
30N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+175℃
RDS(on):
24mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Output Capacitance(Coss):
127pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
2.858nF
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
30N10
Package:
TO-252
Product Description
Product Overview
The 30N10 is an N-channel enhancement mode Power MOSFET designed for load switch and PWM applications. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This product is lead-free and suitable for power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead-free product acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 | 30 | A | ||
| Continuous Drain Current | ID | TC = 100 | 20 | A | ||
| Pulsed Drain Current | IDM | note1 | 120 | A | ||
| Single Pulsed Avalanche Energy | EAS | note2 | 56 | mJ | ||
| Power Dissipation | PD | TC = 25 | 88 | W | ||
| Thermal Resistance, Junction to Case | RJC | 1.7 | /W | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, | - | - | 1.0 | A |
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS=20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=20A, note2 | - | 24 | 30 | m |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=10A, note2 | - | 26 | 34 | m |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 2858 | - | pF |
| Output Capacitance | Coss | - | 127 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, ID=15A, VGS=10V | - | 66 | - | nC |
| Gate-Source Charge | Qgs | - | 10 | - | nC | |
| Gate-Drain(Miller) Charge | Qgd | - | 14 | - | nC | |
| Turn-on Delay Time | td(on) | VDS=30V, ID=15A, RG=1.8, VGS=10V | - | 11 | - | ns |
| Turn-on Rise Time | tr | - | 45 | - | ns | |
| Turn-off Delay Time | td(off) | - | 67 | - | ns | |
| Turn-off Fall Time | tf | - | 48 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 30 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 120 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF=30A,dI/dt=100A/s | - | 28 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | 40 | - | nC | |
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : TJ=25, VDD=50V, VG=10V, L=0.5mH, Rg=25, IAS=15A
3. Pulse Test: Pulse Width300s, Duty Cycle0.5%
2409271402_GOODWORK-30N10_C22466472.pdf
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