Power MOSFET GOODWORK 13N50F featuring 52A pulsed current and 57W power dissipation for LED lighting
Key Attributes
Model Number:
13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
480mΩ@10V,3.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.877nF@50V
Pd - Power Dissipation:
57W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
13N50F
Package:
ITO-220AB
Product Description
13N50F N-Channel Power MOSFET
The 13N50F is an N-Channel Power MOSFET designed with an advanced planar process, offering 100% UIS and Rg tested for enhanced reliability. It is ideal for power supply and AC/DC LED lighting applications, providing efficient power management.
Product Attributes
- Case: Molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750
- Polarity: As marked
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 500 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current (Note 1) | ID | TC = 25°C | 13 | A |
| Continuous Drain Current (Note 1) | ID | TC = 100°C | 8 | A |
| Pulsed Drain Current (Note 2) | IDM | 52 | A | |
| Total Power Dissipation @ TC = 25°C | PDTOT | 57 | W | |
| Single Pulse Avalanche Energy (Note 3) | EAS | 608 | mJ | |
| Single Pulse Avalanche Current (Note 3) | IAS | 7.8 | A | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| THERMAL PERFORMANCE | ||||
| Junction to Case Thermal Resistance | RθJC | 2.2 | °C/W | |
| Junction to Ambient Thermal Resistance | RθJA | 62 | °C/W | |
| ELECTRICAL SPECIFICATIONS | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250µA | 500 | V |
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250µA | 2.5 - 3.8 | V |
| Gate Body Leakage | IGSS | VGS = ±30V, VDS = 0V | -±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 500V, VGS = 0V | -1 | µA |
| Drain-Source On-State Resistance (Note 4) | RDS(on) | VGS = 10V, ID = 3.3A | 0.37 - 0.48 | Ω |
| Total Gate Charge (Note 5) | Qg | VDS = 400V, ID = 6.5A, VGS = 10V | 39 | nC |
| Input Capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1.0MHz | 1877 | pF |
| Output Capacitance | Coss | 128 | pF | |
| Reverse Transfer Capacitance | Crss | 7 | pF | |
| Gate Resistance | Rg | 1.1 - 2.2 | Ω | |
| Turn-On Delay Time (Note 6) | td(on) | VDD = 250V, RG = 5Ω, ID = 6.5A, VGS = 10V | 11 | ns |
| Turn-On Rise Time | tr | 21 | ns | |
| Turn-Off Delay Time | td(off) | 32 | ns | |
| Turn-Off Fall Time | tf | 22 | ns | |
| Body-Diode Continuous Forward Current | IS | 13 | A | |
| Body-Diode Pulsed Current | ISM | 52 | A | |
| Body-Diode Forward Voltage (Note 4) | VSD | IS = 6.5A, VGS = 0V | -1.2 | V |
| Reverse Recovery Time (Note 4) | trr | IS = 6.5A, dIF/dt = 100A/µs | 282 | ns |
| Reverse Recovery Charge (Note 4) | Qrr | 2.9 | µC | |
2408021727_GOODWORK-13N50F_C22463601.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
