Silicon Planar Zener Diodes with Molded Plastic Case and UL 94V0 Flame Retardant Epoxy Construction GOODWORK BZT52C51
Key Attributes
Model Number:
BZT52C51
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
180Ω
Diode Configuration:
Independent
Zener Voltage(Range):
48V~54V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
51V
Impedance(Zzk):
500Ω
Mfr. Part #:
BZT52C51
Package:
SOD-123
Product Description
Product Overview
SILICON PLANAR ZENER DIODES BZT52C2V0 THRU BZT52C75 are designed for high temperature soldering applications, with easy pick and place functionality, making them ideal for surface mount applications. They feature a molded plastic case with UL 94V-0 rate flame retardant epoxy and a metallurgically bonded construction. The polarity is indicated by a color band denoting the cathode end, and they can be mounted in any position.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Molded plastic, UL 94V-0 rate flame retardant epoxy
- Color: Not Specified
- Certifications: UL 94V-0
Technical Specifications
| Type | Marking | Zener Voltage Range (V) Nom. | Test Current IZT (mA) | Maximum Zener Impedance ZZT@IZT () | Reverse Current IR @VR (A) | Power Dissipation Ptot (mW) |
| BZT52C2V0 | WY | 2.0 | 5 | 600 | 150 | 500 |
| BZT52C2V4 | WX | 2.4 | 5 | 600 | 50 | 500 |
| BZT52C2V7 | W1 | 2.7 | 5 | 600 | 20 | 500 |
| BZT52C3V0 | W2 | 3.0 | 5 | 600 | 10 | 500 |
| BZT52C3V3 | W3 | 3.3 | 5 | 600 | 5.0 | 500 |
| BZT52C3V6 | W4 | 3.6 | 5 | 600 | 5.0 | 500 |
| BZT52C3V9 | W5 | 3.9 | 5 | 600 | 3.0 | 500 |
| BZT52C4V3 | W6 | 4.3 | 5 | 600 | 3.0 | 500 |
| BZT52C4V7 | W7 | 4.7 | 5 | 500 | 3.0 | 500 |
| BZT52C5V1 | W8 | 5.1 | 5 | 480 | 2.0 | 500 |
| BZT52C5V6 | W9 | 5.6 | 5 | 400 | 1.0 | 500 |
| BZT52C6V2 | WA | 6.2 | 5 | 150 | 3.0 | 500 |
| BZT52C6V8 | WB | 6.8 | 5 | 80 | 2.0 | 500 |
| BZT52C7V5 | WC | 7.5 | 5 | 80 | 1.0 | 500 |
| BZT52C8V2 | WD | 8.2 | 5 | 80 | 0.7 | 500 |
| BZT52C9V1 | WE | 9.1 | 5 | 100 | 0.5 | 500 |
| BZT52C10 | WF | 10 | 5 | 150 | 0.2 | 500 |
| BZT52C11 | WG | 11 | 5 | 150 | 0.1 | 500 |
| BZT52C12 | WH | 12 | 5 | 150 | 0.1 | 500 |
| BZT52C13 | WI | 13 | 5 | 170 | 0.1 | 500 |
| BZT52C15 | WJ | 15 | 5 | 200 | 0.1 | 500 |
| BZT52C16 | WK | 16 | 5 | 200 | 0.1 | 500 |
| BZT52C18 | WL | 18 | 5 | 225 | 0.1 | 500 |
| BZT52C20 | WM | 20 | 5 | 225 | 0.1 | 500 |
| BZT52C22 | WN | 22 | 5 | 250 | 0.1 | 500 |
| BZT52C24 | WO | 24 | 5 | 250 | 0.1 | 500 |
| BZT52C27 | WP | 27 | 2 | 300 | 0.1 | 500 |
| BZT52C30 | WQ | 30 | 2 | 300 | 0.1 | 500 |
| BZT52C33 | WR | 33 | 2 | 325 | 0.1 | 500 |
| BZT52C36 | WS | 36 | 2 | 350 | 0.1 | 500 |
| BZT52C39 | WT | 39 | 2 | 350 | 0.1 | 500 |
| BZT52C43 | 6A | 43 | 1 | 500 | 2 | 500 |
| BZT52C47 | 6B | 47 | 1 | 500 | 2 | 500 |
| BZT52C51 | 6C | 51 | 1 | 500 | 1 | 500 |
| BZT52C56 | 6D | 56 | 1 | 500 | 1 | 500 |
| BZT52C62 | 6E | 62 | 1 | 500 | 1 | 500 |
| BZT52C68 | 6F | 68 | 1 | 500 | 1 | 500 |
| BZT52C75 | 6H | 75 | 1 | 500 | 1 | 500 |
2412061645_GOODWORK-BZT52C51_C42186037.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
