Power Management and Motor Driving Using GOODWORK 120N10 N Channel MOSFET with Pb Free Lead Plating
Key Attributes
Model Number:
120N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
3mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19.1pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
900pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
4.797nF@50V
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
120N10
Package:
TO-263
Product Description
Product Overview
The 120N10 is an N-Channel Power MOSFET featuring ultra-low RDS(ON) and low gate charge. It is 100% UIS tested and 100% Rg tested, offering Pb-free lead plating and being Halogen-free and RoHS-compliant. This MOSFET is ideal for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC & AC/DC (SR) sub-systems and power management in telecom, industrial automation, and CE products.
Product Attributes
- Certifications: Pb-free Lead Plating, Halogen-free, RoHS-compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-to-Source Voltage | VDS | 100 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Power Dissipation | PD | TC = 25°C | 312 | W | ||
| TC = 100°C | 125 | W | ||||
| Pulsed Drain Current | IDM | (2) | 689 | A | ||
| Avalanche Energy | EAS | (3) | 726 | mJ | ||
| Continuous Drain Current | ID | TC = 25°C (1) | 200 | A | ||
| TC = 100°C (1) | 120 | A | ||||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250µA, VGS = 0V | 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 10V, ID = 20A (1) | 3.0 | mΩ | ||
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | 1.0 | µA | ||
| TJ = 55°C | 5.0 | µA | ||||
| Forward Transconductance | gFS | VDS = 5V, ID = 20A | 50 | S | ||
| Diode Forward Voltage | VSD | IS = 20A, VGS = 0V (2) | 0.66 | 1.0 | V | |
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 50V, f = 1MHz | 4797 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 50V, f = 1MHz | 900 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 50V, f = 1MHz | 19.1 | pF | ||
| SWITCHING PARAMETERS | ||||||
| Gate Resistance | Rg | VGS = 0V, VDS= 0V, f = 1MHz | 1.9 | Ω | ||
| Total Gate Charge | Qg | VDS = 50V, ID = 20A, VGS = 10V (5) | 84 | nC | ||
| VDS = 50V, ID = 20A, VGS = 6.0V (5) | 57 | nC | ||||
| Gate Source Charge | Qgs | VDS = 50V, ID = 20A, VGS = 10V (5) | 24 | nC | ||
| Gate Drain Charge | Qgd | VDS = 50V, ID = 20A, VGS = 10V (5) | 27 | nC | ||
| Turn-On Delay Time | tD(on) | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 21 | ns | ||
| Turn-On Rise Time | tr | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 35 | ns | ||
| Turn-Off Delay Time | tD(off) | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 49 | ns | ||
| Turn-Off Fall Time | tf | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 30 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF = 20A, dIF/dt = 100A/µs (5) | 71 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, dIF/dt = 100A/µs (5) | 127 | nC | ||
| THERMAL PERFORMANCE | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.40 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 45 | °C/W | |||
2408021727_GOODWORK-120N10_C22466870.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
