PNP Bipolar Transistor Guangdong Hottech SS8550 Featuring High Collector Current and Compact Design
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary device to the SS8050. This transistor is suitable for various electronic circuits requiring robust performance in a compact SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Complementary to: SS8050
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Marking: Y2
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -1500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | TA = 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-0.1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 |
| Collector cut-off current | ICEO | -0.1 | uA | VCE=-20V, IB=0 |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 |
| DC current gain | hFE1 | 120 | VCE=-1V, IC=-100mA | |
| DC current gain | hFE1 | 400 | VCE=-1V, IC=-100mA | |
| DC current gain | hFE2 | 40 | VCE=-1V, IC=-800mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mAIB=-80mA |
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-800mAIB=-80mA |
| Base-emitter voltage | VBE | -1 | V | VCE=-1V,IC=-10mA |
| Transition frequency | fT | 100 | MHz | VCE=-10V,IC=-50mA,f=30MHz |
| Collector output capacitance | Cob | 20 | pF | VCE=-10V, IE=0, f=1MHz |
2410122030_Guangdong-Hottech-SS8550_C181161.pdf
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